Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • G. L. Yudin
  • L. N. Gaier
  • Manfred Lein
  • Peter L. Knight
  • P. B. Corkum
  • M. Yu Ivanov

Externe Organisationen

  • National Research Council of Canada
  • Imperial College London
  • Max-Planck-Institut für Physik komplexer Systeme
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Details

OriginalspracheEnglisch
Seiten (von - bis)51-56
Seitenumfang6
FachzeitschriftLaser Physics
Jahrgang14
Ausgabenummer1
PublikationsstatusVeröffentlicht - Jan. 2004
Extern publiziertJa

Abstract

A novel mechanism of hole-assisted energy absorption by dielectric materials interacting with ultrashort laser pulses of moderate intensity (below damage threshold) is proposed. The analytical theory of multiphoton absorption is generalized to the cases of hole-assisted processes in laser fields of arbitrary polarization. Numerical simulations of the non-stationary Schrödinger equation in one-dimensional model systems are performed to gauge the validity of the analytical theory. Large (up to several orders of magnitude) enhancements of the multiphoton transition rates are found both numerically and analytically. The applicability of the analytical theory is confirmed up to relatively high Keldysh parameters.We also describe a second novel mechanism of energy absorption: laser-assisted electron avalanche in dielectric materials. Unlike the traditional avalanche, in this process, collisional excitation of new electrons to the conduction band occurs without heating the already free electrons to energies above the bandgap energy. This process should dominate for ultra-short laser pulses which do not give enough time for the development of the traditional avalanche.

ASJC Scopus Sachgebiete

Zitieren

Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime. / Yudin, G. L.; Gaier, L. N.; Lein, Manfred et al.
in: Laser Physics, Jahrgang 14, Nr. 1, 01.2004, S. 51-56.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Yudin, GL, Gaier, LN, Lein, M, Knight, PL, Corkum, PB & Ivanov, MY 2004, 'Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime', Laser Physics, Jg. 14, Nr. 1, S. 51-56.
Yudin, G. L., Gaier, L. N., Lein, M., Knight, P. L., Corkum, P. B., & Ivanov, M. Y. (2004). Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime. Laser Physics, 14(1), 51-56.
Yudin GL, Gaier LN, Lein M, Knight PL, Corkum PB, Ivanov MY. Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime. Laser Physics. 2004 Jan;14(1):51-56.
Yudin, G. L. ; Gaier, L. N. ; Lein, Manfred et al. / Hole-Assisted Energy Deposition in Clusters and Dielectrics in Multiphoton Regime. in: Laser Physics. 2004 ; Jahrgang 14, Nr. 1. S. 51-56.
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abstract = "A novel mechanism of hole-assisted energy absorption by dielectric materials interacting with ultrashort laser pulses of moderate intensity (below damage threshold) is proposed. The analytical theory of multiphoton absorption is generalized to the cases of hole-assisted processes in laser fields of arbitrary polarization. Numerical simulations of the non-stationary Schr{\"o}dinger equation in one-dimensional model systems are performed to gauge the validity of the analytical theory. Large (up to several orders of magnitude) enhancements of the multiphoton transition rates are found both numerically and analytically. The applicability of the analytical theory is confirmed up to relatively high Keldysh parameters.We also describe a second novel mechanism of energy absorption: laser-assisted electron avalanche in dielectric materials. Unlike the traditional avalanche, in this process, collisional excitation of new electrons to the conduction band occurs without heating the already free electrons to energies above the bandgap energy. This process should dominate for ultra-short laser pulses which do not give enough time for the development of the traditional avalanche.",
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AU - Yudin, G. L.

AU - Gaier, L. N.

AU - Lein, Manfred

AU - Knight, Peter L.

AU - Corkum, P. B.

AU - Ivanov, M. Yu

N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/1

Y1 - 2004/1

N2 - A novel mechanism of hole-assisted energy absorption by dielectric materials interacting with ultrashort laser pulses of moderate intensity (below damage threshold) is proposed. The analytical theory of multiphoton absorption is generalized to the cases of hole-assisted processes in laser fields of arbitrary polarization. Numerical simulations of the non-stationary Schrödinger equation in one-dimensional model systems are performed to gauge the validity of the analytical theory. Large (up to several orders of magnitude) enhancements of the multiphoton transition rates are found both numerically and analytically. The applicability of the analytical theory is confirmed up to relatively high Keldysh parameters.We also describe a second novel mechanism of energy absorption: laser-assisted electron avalanche in dielectric materials. Unlike the traditional avalanche, in this process, collisional excitation of new electrons to the conduction band occurs without heating the already free electrons to energies above the bandgap energy. This process should dominate for ultra-short laser pulses which do not give enough time for the development of the traditional avalanche.

AB - A novel mechanism of hole-assisted energy absorption by dielectric materials interacting with ultrashort laser pulses of moderate intensity (below damage threshold) is proposed. The analytical theory of multiphoton absorption is generalized to the cases of hole-assisted processes in laser fields of arbitrary polarization. Numerical simulations of the non-stationary Schrödinger equation in one-dimensional model systems are performed to gauge the validity of the analytical theory. Large (up to several orders of magnitude) enhancements of the multiphoton transition rates are found both numerically and analytically. The applicability of the analytical theory is confirmed up to relatively high Keldysh parameters.We also describe a second novel mechanism of energy absorption: laser-assisted electron avalanche in dielectric materials. Unlike the traditional avalanche, in this process, collisional excitation of new electrons to the conduction band occurs without heating the already free electrons to energies above the bandgap energy. This process should dominate for ultra-short laser pulses which do not give enough time for the development of the traditional avalanche.

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