Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 333-340 |
| Seitenumfang | 8 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 9 |
| Ausgabenummer | 5 |
| Publikationsstatus | Veröffentlicht - 17 Sept. 2001 |
| Extern publiziert | Ja |
Abstract
Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Progress in Photovoltaics: Research and Applications, Jahrgang 9, Nr. 5, 17.09.2001, S. 333-340.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells
AU - Oberbeck, Lars
AU - Schmidt, Jan
AU - Wagner, Thomas A.
AU - Bergmann, Ralf B.
PY - 2001/9/17
Y1 - 2001/9/17
N2 - Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
AB - Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 μm, obtained at a record deposition rate of 0.8 μm/min and a deposition temperature of 650°C with a prebake at 810°C. A thin-film Si solar cell with a 20-μm-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps.
UR - http://www.scopus.com/inward/record.url?scp=0035446356&partnerID=8YFLogxK
U2 - 10.1002/pip.385
DO - 10.1002/pip.385
M3 - Article
AN - SCOPUS:0035446356
VL - 9
SP - 333
EP - 340
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 5
ER -