Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 301-306 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 8 |
| Frühes Online-Datum | 12 Aug. 2011 |
| Publikationsstatus | Veröffentlicht - 2011 |
Abstract
High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 8, 2011, S. 301-306.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
AU - Werner, Florian
AU - Stals, Walter
AU - Görtzen, Roger
AU - Veith, Boris
AU - Brendel, Rolf
AU - Schmidt, Jan
PY - 2011
Y1 - 2011
N2 - High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.
AB - High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.
KW - Aluminum oxide
KW - Silicon
KW - Spatial ALD
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=80052084033&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.140
DO - 10.1016/j.egypro.2011.06.140
M3 - Article
AN - SCOPUS:80052084033
VL - 8
SP - 301
EP - 306
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -