Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 21-31 |
| Seitenumfang | 11 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 12 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Jan. 2004 |
| Extern publiziert | Ja |
Abstract
We have studied the surface passivation of silicon by deposition of silicon nitride (SiN) in an industrial-type inline plasma-enhanced chemical vapor deposition (PECVD) reactor designed for the continuous coating of silicon solar cells with high throughput. An optimization study for the passivation of low-resistivity p-type silicon has been performed exploring the dependence of the film quality on key deposition parameters of the system. With the optimized films, excellent passivation properties have been obtained, both on undiffused p-type silicon and on phosphorus-diffused n+ emitters. Using a simple design, solar cells with conversion efficiencies above 20% have been fabricated to prove the efficacy of the inline PECVD SiN. The passivation properties of the films are on a par with those of high-quality films prepared in small-area laboratory PECVD reactors.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
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in: Progress in Photovoltaics: Research and Applications, Jahrgang 12, Nr. 1, 01.2004, S. 21-31.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system
AU - Moschner, Jens D.
AU - Henze, Jürgen
AU - Schmidt, Jan
AU - Hezel, Rudolf
PY - 2004/1
Y1 - 2004/1
N2 - We have studied the surface passivation of silicon by deposition of silicon nitride (SiN) in an industrial-type inline plasma-enhanced chemical vapor deposition (PECVD) reactor designed for the continuous coating of silicon solar cells with high throughput. An optimization study for the passivation of low-resistivity p-type silicon has been performed exploring the dependence of the film quality on key deposition parameters of the system. With the optimized films, excellent passivation properties have been obtained, both on undiffused p-type silicon and on phosphorus-diffused n+ emitters. Using a simple design, solar cells with conversion efficiencies above 20% have been fabricated to prove the efficacy of the inline PECVD SiN. The passivation properties of the films are on a par with those of high-quality films prepared in small-area laboratory PECVD reactors.
AB - We have studied the surface passivation of silicon by deposition of silicon nitride (SiN) in an industrial-type inline plasma-enhanced chemical vapor deposition (PECVD) reactor designed for the continuous coating of silicon solar cells with high throughput. An optimization study for the passivation of low-resistivity p-type silicon has been performed exploring the dependence of the film quality on key deposition parameters of the system. With the optimized films, excellent passivation properties have been obtained, both on undiffused p-type silicon and on phosphorus-diffused n+ emitters. Using a simple design, solar cells with conversion efficiencies above 20% have been fabricated to prove the efficacy of the inline PECVD SiN. The passivation properties of the films are on a par with those of high-quality films prepared in small-area laboratory PECVD reactors.
KW - PECVD
KW - Silicon nitride
KW - Solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=0842269051&partnerID=8YFLogxK
U2 - 10.1002/pip.523
DO - 10.1002/pip.523
M3 - Article
AN - SCOPUS:0842269051
VL - 12
SP - 21
EP - 31
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 1
ER -