Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 570-577 |
| Seitenumfang | 8 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 55 |
| Publikationsstatus | Veröffentlicht - 2014 |
| Veranstaltung | 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Niederlande Dauer: 25 März 2014 → 27 März 2014 |
Abstract
Kerfless wafering techniques offer a significant cost saving potential via the reduction of silicon consumption. In this paper, we examine thin single crystalline Si foils that were fabricated by a novel kerfless thermo-mechanical exfoliation method utilizing evaporated Al with regard to their suitability for solar cell applications. The foils are 50-80 μm thick and smooth to visual inspection across the almost entire surface. We measure the effective minority carrier lifetimes of the foils and the remaining parent substrates by quasi-steady-state photoconductance (QSSPC) and spatially resolved by dynamically calibrated steady state infrared carrier lifetime mapping (dynILM). We find lifetimes of above 120 μs for kerfless exfoliated 0.5 Ωcm p-type float-zone (FZ) Si layers. With an additional etching step after exfoliation, we obtain effective lifetimes of above 200 μs. The measurements reveal that there is no critical lifetime degradation due to exfoliation-induced surface features and thus the exfoliated layers are well-suited for high-quality solar cells.
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in: Energy Procedia, Jahrgang 55, 2014, S. 570-577.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - High-quality exfoliated crystalline silicon foils for solar cell applications
AU - Niepelt, Raphael
AU - Knorr, Alwina
AU - Steckenreiter, Verena
AU - Kajari-Schoder, Sarah
AU - Brendel, Rolf
AU - Hensen, J.
PY - 2014
Y1 - 2014
N2 - Kerfless wafering techniques offer a significant cost saving potential via the reduction of silicon consumption. In this paper, we examine thin single crystalline Si foils that were fabricated by a novel kerfless thermo-mechanical exfoliation method utilizing evaporated Al with regard to their suitability for solar cell applications. The foils are 50-80 μm thick and smooth to visual inspection across the almost entire surface. We measure the effective minority carrier lifetimes of the foils and the remaining parent substrates by quasi-steady-state photoconductance (QSSPC) and spatially resolved by dynamically calibrated steady state infrared carrier lifetime mapping (dynILM). We find lifetimes of above 120 μs for kerfless exfoliated 0.5 Ωcm p-type float-zone (FZ) Si layers. With an additional etching step after exfoliation, we obtain effective lifetimes of above 200 μs. The measurements reveal that there is no critical lifetime degradation due to exfoliation-induced surface features and thus the exfoliated layers are well-suited for high-quality solar cells.
AB - Kerfless wafering techniques offer a significant cost saving potential via the reduction of silicon consumption. In this paper, we examine thin single crystalline Si foils that were fabricated by a novel kerfless thermo-mechanical exfoliation method utilizing evaporated Al with regard to their suitability for solar cell applications. The foils are 50-80 μm thick and smooth to visual inspection across the almost entire surface. We measure the effective minority carrier lifetimes of the foils and the remaining parent substrates by quasi-steady-state photoconductance (QSSPC) and spatially resolved by dynamically calibrated steady state infrared carrier lifetime mapping (dynILM). We find lifetimes of above 120 μs for kerfless exfoliated 0.5 Ωcm p-type float-zone (FZ) Si layers. With an additional etching step after exfoliation, we obtain effective lifetimes of above 200 μs. The measurements reveal that there is no critical lifetime degradation due to exfoliation-induced surface features and thus the exfoliated layers are well-suited for high-quality solar cells.
KW - Carrier lifetime
KW - Exfoliation
KW - Kerf-free
KW - Layer transfer
KW - Photovoltaic
KW - Spalling
KW - Wafering
UR - http://www.scopus.com/inward/record.url?scp=84922273661&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2014.08.028
DO - 10.1016/j.egypro.2014.08.028
M3 - Conference article
AN - SCOPUS:84922273661
VL - 55
SP - 570
EP - 577
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014
Y2 - 25 March 2014 through 27 March 2014
ER -