Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • O. S. Brozek
  • V. Quetschke
  • A. Wicht
  • K. Danzmann

Externe Organisationen

  • Max-Planck-Institut für Quantenoptik (MPQ)
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Details

OriginalspracheEnglisch
Seiten (von - bis)141-146
Seitenumfang6
FachzeitschriftOptics communications
Jahrgang146
Ausgabenummer1-6
PublikationsstatusVeröffentlicht - 15 Jan. 1998

Abstract

We report on 50% conversion efficiency for frequency doubling of a 854 nm GaAlAs diode laser using a potassium niobate crystal in an external ring cavity. Frequency stabilization of the diode laser is achieved by direct optical feedback from the doubling cavity or from a grating in Littrow configuration. We determine 200 kHz linewidth from the measured spectral density of the frequency noise and from a beat signal measurement of two independent diode lasers. The blue output power of 7.8 mW shows rms-fluctuations of less than 0.6% in 1 MHz bandwidth.

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Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. / Brozek, O. S.; Quetschke, V.; Wicht, A. et al.
in: Optics communications, Jahrgang 146, Nr. 1-6, 15.01.1998, S. 141-146.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Brozek OS, Quetschke V, Wicht A, Danzmann K. Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. Optics communications. 1998 Jan 15;146(1-6):141-146. doi: 10.1016/S0030-4018(97)00492-6
Brozek, O. S. ; Quetschke, V. ; Wicht, A. et al. / Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. in: Optics communications. 1998 ; Jahrgang 146, Nr. 1-6. S. 141-146.
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