Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1274-1279 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solid-State Electronics |
| Jahrgang | 52 |
| Ausgabenummer | 9 |
| Frühes Online-Datum | 15 Mai 2008 |
| Publikationsstatus | Veröffentlicht - Sept. 2008 |
Abstract
Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Solid-State Electronics, Jahrgang 52, Nr. 9, 09.2008, S. 1274-1279.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
AU - Raeissi, B.
AU - Piscator, J.
AU - Engström, O.
AU - Hall, S.
AU - Buiu, O.
AU - Lemme, M. C.
AU - Gottlob, H. D.B.
AU - Hurley, P. K.
AU - Cherkaoui, K.
AU - Osten, H. J.
N1 - Acknowledgments: The authors would like to acknowledge the Sixth European Framework programme through the PullNANO Project (IST– 026828), Swedish Foundation for Strategic Research (SSF) Project NEMO, EPSRC in UK, the Science Foundation Ireland (05/IN/1751) and the German Federal Ministry of Education and Research (BMBF) Project MEGA EPOS (13N9260) for financial support of this work. The ALD samples were supplied by Paul Chalker.
PY - 2008/9
Y1 - 2008/9
N2 - Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
AB - Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
KW - Capacitance frequency spectroscopy
KW - Capture cross section
KW - GdO
KW - HfO
KW - High-k
KW - MOS
UR - http://www.scopus.com/inward/record.url?scp=50649119906&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2008.04.005
DO - 10.1016/j.sse.2008.04.005
M3 - Article
AN - SCOPUS:50649119906
VL - 52
SP - 1274
EP - 1279
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 9
ER -