High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • J. P. Liu
  • P. Gaworzewski
  • E. Bugiel
  • P. Zaumseil

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)653-656
Seitenumfang4
FachzeitschriftTechnical Digest - International Electron Devices Meeting
PublikationsstatusVeröffentlicht - 6 Aug. 2002
Extern publiziertJa

Abstract

The dielectric properties of praseodymium oxide films grown on Si(100) has been experimentally investigated. The crystalline film was found to exhibit an effective dielectric constant of 31, independent of the substrate doping type. Its electrical characteristics such as leakage current density, gate dielectric reliability, thermal stability and C-V characteristics have been discussed. Single crystal nature of the grown layers was confirmed by x-ray diffraction, cross-sectional transmission electron microscopy and electron diffraction.

ASJC Scopus Sachgebiete

Zitieren

High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. / Osten, H. J.; Liu, J. P.; Gaworzewski, P. et al.
in: Technical Digest - International Electron Devices Meeting, 06.08.2002, S. 653-656.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten, HJ, Liu, JP, Gaworzewski, P, Bugiel, E & Zaumseil, P 2002, 'High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide', Technical Digest - International Electron Devices Meeting, S. 653-656. https://doi.org/10.1109/IEDM.2000.904404
Osten, H. J., Liu, J. P., Gaworzewski, P., Bugiel, E., & Zaumseil, P. (2002). High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. Technical Digest - International Electron Devices Meeting, 653-656. https://doi.org/10.1109/IEDM.2000.904404
Osten HJ, Liu JP, Gaworzewski P, Bugiel E, Zaumseil P. High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. Technical Digest - International Electron Devices Meeting. 2002 Aug 6;653-656. doi: 10.1109/IEDM.2000.904404
Osten, H. J. ; Liu, J. P. ; Gaworzewski, P. et al. / High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide. in: Technical Digest - International Electron Devices Meeting. 2002 ; S. 653-656.
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