Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 56th ARFTG Conference Digest |
| Untertitel | Metrology and Test for RF Telecommunications, ARFTG 2000 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 0780356861, 9780780356863 |
| Publikationsstatus | Veröffentlicht - 2000 |
| Veranstaltung | 56th ARFTG Conference Digest, ARFTG 2000 - Boulder, USA / Vereinigte Staaten Dauer: 30 Nov. 2000 → 1 Dez. 2000 |
Publikationsreihe
| Name | 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000 |
|---|
Abstract
In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
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- RIS
56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000. Institute of Electrical and Electronics Engineers Inc., 2000. 4120124 (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers
AU - Arz, Uwe
AU - Williams, Dylan F.
AU - Walker, David K.
AU - Grabinski, Hartmut
PY - 2000
Y1 - 2000
N2 - In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
AB - In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
UR - http://www.scopus.com/inward/record.url?scp=84960380401&partnerID=8YFLogxK
U2 - 10.1109/ARFTG.2000.327425
DO - 10.1109/ARFTG.2000.327425
M3 - Conference contribution
AN - SCOPUS:84960380401
T3 - 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000
BT - 56th ARFTG Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 56th ARFTG Conference Digest, ARFTG 2000
Y2 - 30 November 2000 through 1 December 2000
ER -