High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Uwe Arz
  • Dylan F. Williams
  • David K. Walker
  • Hartmut Grabinski

Organisationseinheiten

Externe Organisationen

  • National Institute of Standards and Technology (NIST)
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Details

OriginalspracheEnglisch
Titel des Sammelwerks56th ARFTG Conference Digest
UntertitelMetrology and Test for RF Telecommunications, ARFTG 2000
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)0780356861, 9780780356863
PublikationsstatusVeröffentlicht - 2000
Veranstaltung56th ARFTG Conference Digest, ARFTG 2000 - Boulder, USA / Vereinigte Staaten
Dauer: 30 Nov. 2000 → 1 Dez. 2000

Publikationsreihe

Name56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000

Abstract

In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.

ASJC Scopus Sachgebiete

Zitieren

High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers. / Arz, Uwe; Williams, Dylan F.; Walker, David K. et al.
56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000. Institute of Electrical and Electronics Engineers Inc., 2000. 4120124 (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Arz, U, Williams, DF, Walker, DK & Grabinski, H 2000, High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers. in 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000., 4120124, 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000, Institute of Electrical and Electronics Engineers Inc., 56th ARFTG Conference Digest, ARFTG 2000, Boulder, USA / Vereinigte Staaten, 30 Nov. 2000. https://doi.org/10.1109/ARFTG.2000.327425
Arz, U., Williams, D. F., Walker, D. K., & Grabinski, H. (2000). High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers. In 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000 Artikel 4120124 (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ARFTG.2000.327425
Arz U, Williams DF, Walker DK, Grabinski H. High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers. in 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000. Institute of Electrical and Electronics Engineers Inc. 2000. 4120124. (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000). doi: 10.1109/ARFTG.2000.327425
Arz, Uwe ; Williams, Dylan F. ; Walker, David K. et al. / High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers. 56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000. Institute of Electrical and Electronics Engineers Inc., 2000. (56th ARFTG Conference Digest: Metrology and Test for RF Telecommunications, ARFTG 2000).
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abstract = "In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 μm CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.",
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