Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 585-591 |
| Seitenumfang | 7 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 65 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 28 Sept. 2000 |
| Publikationsstatus | Veröffentlicht - Jan. 2001 |
| Extern publiziert | Ja |
Abstract
The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 Ω cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
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in: Solar Energy Materials and Solar Cells, Jahrgang 65, Nr. 1, 01.2001, S. 585-591.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
AU - Schmidt, Jan
AU - Kerr, Mark
PY - 2001/1
Y1 - 2001/1
N2 - The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 Ω cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases.
AB - The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 Ω cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases.
UR - http://www.scopus.com/inward/record.url?scp=0035199111&partnerID=8YFLogxK
U2 - 10.1016/S0927-0248(00)00145-8
DO - 10.1016/S0927-0248(00)00145-8
M3 - Article
AN - SCOPUS:0035199111
VL - 65
SP - 585
EP - 591
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1
ER -