Higher order mode behavior in loaded and unloaded TEM cells

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Ch Groh
  • H. Garbe
  • M. Koch

Externe Organisationen

  • Autoflug GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksIEEE International Symposium on Electromagnetic Compatibility
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten225-230
Seitenumfang6
ISBN (elektronisch)078035057X, 9780780350571
PublikationsstatusVeröffentlicht - 1999
Veranstaltung1999 IEEE International Symposium on Electromagnetic Compatibility, EMC 1999 - Seattle, USA / Vereinigte Staaten
Dauer: 2 Aug. 19996 Aug. 1999

Publikationsreihe

NameIEEE International Symposium on Electromagnetic Compatibility
Band1
ISSN (Print)1077-4076
ISSN (elektronisch)2158-1118

Abstract

The resonances of higher order modes determine the usable bandwidth of a TEM cell. Since the resonating mode and its characteristic field distribution are known, measures are taken to selectively suppress resonances of higher order modes. Thus the bandwidth of the cell is expanded without affecting the TEM mode. Loading the cell with objects results in abrupt changes of the cross sectional geometry. The effects on the resonances due to the size and position of the objects are examined.

ASJC Scopus Sachgebiete

Zitieren

Higher order mode behavior in loaded and unloaded TEM cells. / Groh, Ch; Garbe, H.; Koch, M.
IEEE International Symposium on Electromagnetic Compatibility. Institute of Electrical and Electronics Engineers Inc., 1999. S. 225-230 812899 (IEEE International Symposium on Electromagnetic Compatibility; Band 1).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Groh, C, Garbe, H & Koch, M 1999, Higher order mode behavior in loaded and unloaded TEM cells. in IEEE International Symposium on Electromagnetic Compatibility., 812899, IEEE International Symposium on Electromagnetic Compatibility, Bd. 1, Institute of Electrical and Electronics Engineers Inc., S. 225-230, 1999 IEEE International Symposium on Electromagnetic Compatibility, EMC 1999, Seattle, USA / Vereinigte Staaten, 2 Aug. 1999. https://doi.org/10.1109/ISEMC.1999.812899
Groh, C., Garbe, H., & Koch, M. (1999). Higher order mode behavior in loaded and unloaded TEM cells. In IEEE International Symposium on Electromagnetic Compatibility (S. 225-230). Artikel 812899 (IEEE International Symposium on Electromagnetic Compatibility; Band 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISEMC.1999.812899
Groh C, Garbe H, Koch M. Higher order mode behavior in loaded and unloaded TEM cells. in IEEE International Symposium on Electromagnetic Compatibility. Institute of Electrical and Electronics Engineers Inc. 1999. S. 225-230. 812899. (IEEE International Symposium on Electromagnetic Compatibility). doi: 10.1109/ISEMC.1999.812899
Groh, Ch ; Garbe, H. ; Koch, M. / Higher order mode behavior in loaded and unloaded TEM cells. IEEE International Symposium on Electromagnetic Compatibility. Institute of Electrical and Electronics Engineers Inc., 1999. S. 225-230 (IEEE International Symposium on Electromagnetic Compatibility).
Download
@inproceedings{bd56d500b577474b9c0769e68dbd34d0,
title = "Higher order mode behavior in loaded and unloaded TEM cells",
abstract = "The resonances of higher order modes determine the usable bandwidth of a TEM cell. Since the resonating mode and its characteristic field distribution are known, measures are taken to selectively suppress resonances of higher order modes. Thus the bandwidth of the cell is expanded without affecting the TEM mode. Loading the cell with objects results in abrupt changes of the cross sectional geometry. The effects on the resonances due to the size and position of the objects are examined.",
author = "Ch Groh and H. Garbe and M. Koch",
year = "1999",
doi = "10.1109/ISEMC.1999.812899",
language = "English",
series = "IEEE International Symposium on Electromagnetic Compatibility",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "225--230",
booktitle = "IEEE International Symposium on Electromagnetic Compatibility",
address = "United States",
note = "1999 IEEE International Symposium on Electromagnetic Compatibility, EMC 1999 ; Conference date: 02-08-1999 Through 06-08-1999",

}

Download

TY - GEN

T1 - Higher order mode behavior in loaded and unloaded TEM cells

AU - Groh, Ch

AU - Garbe, H.

AU - Koch, M.

PY - 1999

Y1 - 1999

N2 - The resonances of higher order modes determine the usable bandwidth of a TEM cell. Since the resonating mode and its characteristic field distribution are known, measures are taken to selectively suppress resonances of higher order modes. Thus the bandwidth of the cell is expanded without affecting the TEM mode. Loading the cell with objects results in abrupt changes of the cross sectional geometry. The effects on the resonances due to the size and position of the objects are examined.

AB - The resonances of higher order modes determine the usable bandwidth of a TEM cell. Since the resonating mode and its characteristic field distribution are known, measures are taken to selectively suppress resonances of higher order modes. Thus the bandwidth of the cell is expanded without affecting the TEM mode. Loading the cell with objects results in abrupt changes of the cross sectional geometry. The effects on the resonances due to the size and position of the objects are examined.

UR - http://www.scopus.com/inward/record.url?scp=0033319810&partnerID=8YFLogxK

U2 - 10.1109/ISEMC.1999.812899

DO - 10.1109/ISEMC.1999.812899

M3 - Conference contribution

AN - SCOPUS:0033319810

T3 - IEEE International Symposium on Electromagnetic Compatibility

SP - 225

EP - 230

BT - IEEE International Symposium on Electromagnetic Compatibility

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 IEEE International Symposium on Electromagnetic Compatibility, EMC 1999

Y2 - 2 August 1999 through 6 August 1999

ER -