High temperature electron spin relaxation in bulk GaAs

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OriginalspracheEnglisch
Aufsatznummer132112
FachzeitschriftApplied Physics Letters
Jahrgang93
Ausgabenummer13
PublikationsstatusVeröffentlicht - 1 Okt. 2008

Abstract

Temperature and electron density dependent measurements of the electron spin relaxation in bulk GaAs are performed using time- and polarization-resolved photoluminescence spectroscopy. The electron spin relaxation time is dominated in the high temperature regime by the D'yakonov-Perel' [M. I. D'yakonov and V. I. Perel', Sov. Phys. Solid State 13, 3023 (1972)] spin relaxation mechanism and decreases for negligible electron densities from 42 ps at 300 K to 20 ps at 400 K. The measured spin relaxation times are compared with numerical calculations which include electron-phonon momentum scattering and have no adjustable parameters.

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High temperature electron spin relaxation in bulk GaAs. / Oertel, S.; Hübner, Jens; Oestreich, Michael.
in: Applied Physics Letters, Jahrgang 93, Nr. 13, 132112, 01.10.2008.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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AU - Oertel, S.

AU - Hübner, Jens

AU - Oestreich, Michael

N1 - Funding information: We thank Michael Krauss for valuable discussions and Markus Beck for providing the sample. This work has been supported by the DFG and the BMBF (NanoQuit).

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AB - Temperature and electron density dependent measurements of the electron spin relaxation in bulk GaAs are performed using time- and polarization-resolved photoluminescence spectroscopy. The electron spin relaxation time is dominated in the high temperature regime by the D'yakonov-Perel' [M. I. D'yakonov and V. I. Perel', Sov. Phys. Solid State 13, 3023 (1972)] spin relaxation mechanism and decreases for negligible electron densities from 42 ps at 300 K to 20 ps at 400 K. The measured spin relaxation times are compared with numerical calculations which include electron-phonon momentum scattering and have no adjustable parameters.

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