High speed laser structuring of crystalline silicon solar cells

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autorschaft

  • S. Eidelloth
  • T. Neubert
  • T. Brendemühl
  • S. Hermann
  • P. Giesel
  • R. Brendel

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des Sammelwerks2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Seiten2389-2394
Seitenumfang6
ISBN (elektronisch)9781424429509
PublikationsstatusVeröffentlicht - 2009
Extern publiziertJa
Veranstaltung34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, USA / Vereinigte Staaten
Dauer: 7 Juni 200912 Juni 2009
Konferenznummer: 34

Publikationsreihe

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Abstract

Fast laser processing is commonly done using a Gaussian laser beam in combination with a scanner. Single laser pulses only affect a limited area beneath the Gaussian intensity bell and result in circular impact regions. Adjacent impact regions have to overlap when continuous processing larger areas. Thus, the processing speed is greatly enhanced by replacing the Gaussian profile with a flat-top intensity profile and by replacing the radial symmetric cross section with a rectangular cross section. However, processing with a rectangular flat-top laser beam through a scanner has, to the best of our knowledge, not yet been demonstrated. We report on the successful design and experimental tests of a new laser system that images a rectangular flat-top profile through a scanner. Our so-called Simultaneous Scanning and Laser Beam Imaging - system (SIMSALABIM) machines a finger pattern that covers 50 % of a (125 x 125) mm2 crystalline Si solar cell in 14 s. Two parallel systems with increased output power should process the same area in just 2.5 s.

ASJC Scopus Sachgebiete

Zitieren

High speed laser structuring of crystalline silicon solar cells. / Eidelloth, S.; Neubert, T.; Brendemühl, T. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 2389-2394 5411310 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Eidelloth, S, Neubert, T, Brendemühl, T, Hermann, S, Giesel, P & Brendel, R 2009, High speed laser structuring of crystalline silicon solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411310, Conference Record of the IEEE Photovoltaic Specialists Conference, S. 2389-2394, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, PA, USA / Vereinigte Staaten, 7 Juni 2009. https://doi.org/10.1109/PVSC.2009.5411310
Eidelloth, S., Neubert, T., Brendemühl, T., Hermann, S., Giesel, P., & Brendel, R. (2009). High speed laser structuring of crystalline silicon solar cells. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (S. 2389-2394). Artikel 5411310 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411310
Eidelloth S, Neubert T, Brendemühl T, Hermann S, Giesel P, Brendel R. High speed laser structuring of crystalline silicon solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 2389-2394. 5411310. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2009.5411310
Eidelloth, S. ; Neubert, T. ; Brendemühl, T. et al. / High speed laser structuring of crystalline silicon solar cells. 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 2389-2394 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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abstract = "Fast laser processing is commonly done using a Gaussian laser beam in combination with a scanner. Single laser pulses only affect a limited area beneath the Gaussian intensity bell and result in circular impact regions. Adjacent impact regions have to overlap when continuous processing larger areas. Thus, the processing speed is greatly enhanced by replacing the Gaussian profile with a flat-top intensity profile and by replacing the radial symmetric cross section with a rectangular cross section. However, processing with a rectangular flat-top laser beam through a scanner has, to the best of our knowledge, not yet been demonstrated. We report on the successful design and experimental tests of a new laser system that images a rectangular flat-top profile through a scanner. Our so-called Simultaneous Scanning and Laser Beam Imaging - system (SIMSALABIM) machines a finger pattern that covers 50 % of a (125 x 125) mm2 crystalline Si solar cell in 14 s. Two parallel systems with increased output power should process the same area in just 2.5 s.",
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note = "Funding Information: The financial support by the German ministry of BMU for the project LaserInvest (No. 0327547A) is gratefully acknowledged; 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) ; Conference date: 07-06-2009 Through 12-06-2009",
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