High frequency conductance of a quantum point contact

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

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OriginalspracheEnglisch
Seiten (von - bis)272-275
Seitenumfang4
FachzeitschriftPhysica E: Low-Dimensional Systems and Nanostructures
Jahrgang22
Ausgabenummer1-3
PublikationsstatusVeröffentlicht - 7 Feb. 2004
Veranstaltung15th International Conference on ELectronic Propreties - Nara, Japan
Dauer: 14 Juli 200318 Juli 2003

Abstract

We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

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High frequency conductance of a quantum point contact. / Regul, J.; Hohls, F.; Reuter, D. et al.
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 22, Nr. 1-3, 07.02.2004, S. 272-275.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Regul J, Hohls F, Reuter D, Wieck AD, Haug RJ. High frequency conductance of a quantum point contact. Physica E: Low-Dimensional Systems and Nanostructures. 2004 Feb 7;22(1-3):272-275. doi: 10.1016/j.physe.2003.11.266
Regul, J. ; Hohls, F. ; Reuter, D. et al. / High frequency conductance of a quantum point contact. in: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Jahrgang 22, Nr. 1-3. S. 272-275.
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keywords = "AFM lithography, High frequency conductance, Quantum point contact",
author = "J. Regul and F. Hohls and D. Reuter and Wieck, {A. D.} and Haug, {R. J.}",
note = "Funding information: We thank Ulrich Keyser for the AFM lithography and the AFM picture and we acknowledge financial support by the BMBF and the DFG.; 15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",
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TY - JOUR

T1 - High frequency conductance of a quantum point contact

AU - Regul, J.

AU - Hohls, F.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Haug, R. J.

N1 - Funding information: We thank Ulrich Keyser for the AFM lithography and the AFM picture and we acknowledge financial support by the BMBF and the DFG.

PY - 2004/2/7

Y1 - 2004/2/7

N2 - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

AB - We present an experimental study of the AC conductance GAC of an atomic force microscope engraved quantum point contact at high frequency f=160 MHz. In agreement with theoretical predictions the real part R(GAC) is unchanged from the DC-conductance GDC. The imaginary part I(G AC) changes for every addition of a new conductance channel.

KW - AFM lithography

KW - High frequency conductance

KW - Quantum point contact

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U2 - 10.1016/j.physe.2003.11.266

DO - 10.1016/j.physe.2003.11.266

M3 - Conference article

AN - SCOPUS:1842785392

VL - 22

SP - 272

EP - 275

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

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