Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Caspar Hopfmann
  • Nand Lal Sharma
  • Weijie Nie
  • Robert Keil
  • Fei Ding
  • Oliver G. Schmidt

Organisationseinheiten

Externe Organisationen

  • Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (IFW) e.V.
  • Technische Universität Chemnitz
  • Technische Universität Dresden
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer075301
Seitenumfang12
FachzeitschriftPhysical Review B
Jahrgang104
Ausgabenummer7
Frühes Online-Datum5 Aug. 2021
PublikationsstatusVeröffentlicht - 15 Aug. 2021

Abstract

We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

ASJC Scopus Sachgebiete

Zitieren

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. / Hopfmann, Caspar; Sharma, Nand Lal; Nie, Weijie et al.
in: Physical Review B, Jahrgang 104, Nr. 7, 075301, 15.08.2021.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Hopfmann C, Sharma NL, Nie W, Keil R, Ding F, Schmidt OG. Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. Physical Review B. 2021 Aug 15;104(7):075301. Epub 2021 Aug 5. doi: 10.1103/physrevb.104.075301
Hopfmann, Caspar ; Sharma, Nand Lal ; Nie, Weijie et al. / Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation. in: Physical Review B. 2021 ; Jahrgang 104, Nr. 7.
Download
@article{3a65c343d8a44dd3ba78a28ef5e8c687,
title = "Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation",
abstract = "We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.",
author = "Caspar Hopfmann and Sharma, {Nand Lal} and Weijie Nie and Robert Keil and Fei Ding and Schmidt, {Oliver G.}",
note = "Funding Information: We thank Michael Zopf and Jingzhong Yang (LU Hannover) for fruitful discussions. We acknowledge funding by the BMBF project Q.link.X under Grant Agreement No. 100362122 and the European Research Council Horizon 2020 project QD-NOMS under Grant Agreement No. 715770.",
year = "2021",
month = aug,
day = "15",
doi = "10.1103/physrevb.104.075301",
language = "English",
volume = "104",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Institute of Physics",
number = "7",

}

Download

TY - JOUR

T1 - Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

AU - Hopfmann, Caspar

AU - Sharma, Nand Lal

AU - Nie, Weijie

AU - Keil, Robert

AU - Ding, Fei

AU - Schmidt, Oliver G.

N1 - Funding Information: We thank Michael Zopf and Jingzhong Yang (LU Hannover) for fruitful discussions. We acknowledge funding by the BMBF project Q.link.X under Grant Agreement No. 100362122 and the European Research Council Horizon 2020 project QD-NOMS under Grant Agreement No. 715770.

PY - 2021/8/15

Y1 - 2021/8/15

N2 - We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

AB - We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities - irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s-p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness.

UR - http://www.scopus.com/inward/record.url?scp=85112032182&partnerID=8YFLogxK

U2 - 10.1103/physrevb.104.075301

DO - 10.1103/physrevb.104.075301

M3 - Article

VL - 104

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 7

M1 - 075301

ER -

Von denselben Autoren