Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • G. Lippert
  • H. J. Osten
  • D. Kruger

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)411-416
Seitenumfang6
FachzeitschriftMaterials Research Society Symposium - Proceedings
Jahrgang379
PublikationsstatusVeröffentlicht - 1995
Extern publiziertJa
Veranstaltung1995 MRS Spring Meeting - San Francisco, USA / Vereinigte Staaten
Dauer: 17 Apr. 1995 → 20 Apr. 1995

Abstract

Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.

ASJC Scopus Sachgebiete

Zitieren

Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source. / Lippert, G.; Osten, H. J.; Kruger, D.
in: Materials Research Society Symposium - Proceedings, Jahrgang 379, 1995, S. 411-416.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Lippert, G, Osten, HJ & Kruger, D 1995, 'Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source', Materials Research Society Symposium - Proceedings, Jg. 379, S. 411-416.
Lippert, G., Osten, H. J., & Kruger, D. (1995). Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source. Materials Research Society Symposium - Proceedings, 379, 411-416.
Lippert G, Osten HJ, Kruger D. Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source. Materials Research Society Symposium - Proceedings. 1995;379:411-416.
Lippert, G. ; Osten, H. J. ; Kruger, D. / Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source. in: Materials Research Society Symposium - Proceedings. 1995 ; Jahrgang 379. S. 411-416.
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abstract = "Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.",
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TY - JOUR

T1 - Heavy phosphorus doping in molecular beam epitaxial grown silicon and silicon and silicon/germanium with a GaP decomposition source

AU - Lippert, G.

AU - Osten, H. J.

AU - Kruger, D.

PY - 1995

Y1 - 1995

N2 - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.

AB - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm-3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga 'memory effect' of the UHV equipment.

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JO - Materials Research Society Symposium - Proceedings

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T2 - 1995 MRS Spring Meeting

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