Growth of crystalline praseodymium oxide on silicon

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • H. J. Osten
  • J. P. Liu
  • E. Bugiel
  • H. J. Muüssig
  • P. Zaumseil

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)229-234
Seitenumfang6
FachzeitschriftJournal of crystal growth
Jahrgang235
Ausgabenummer1-4
Frühes Online-Datum6 Nov. 2001
PublikationsstatusVeröffentlicht - Feb. 2002
Extern publiziertJa

Abstract

We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

ASJC Scopus Sachgebiete

Zitieren

Growth of crystalline praseodymium oxide on silicon. / Osten, H. J.; Liu, J. P.; Bugiel, E. et al.
in: Journal of crystal growth, Jahrgang 235, Nr. 1-4, 02.2002, S. 229-234.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Osten, HJ, Liu, JP, Bugiel, E, Muüssig, HJ & Zaumseil, P 2002, 'Growth of crystalline praseodymium oxide on silicon', Journal of crystal growth, Jg. 235, Nr. 1-4, S. 229-234. https://doi.org/10.1016/S0022-0248(01)01777-8
Osten, H. J., Liu, J. P., Bugiel, E., Muüssig, H. J., & Zaumseil, P. (2002). Growth of crystalline praseodymium oxide on silicon. Journal of crystal growth, 235(1-4), 229-234. https://doi.org/10.1016/S0022-0248(01)01777-8
Osten HJ, Liu JP, Bugiel E, Muüssig HJ, Zaumseil P. Growth of crystalline praseodymium oxide on silicon. Journal of crystal growth. 2002 Feb;235(1-4):229-234. Epub 2001 Nov 6. doi: 10.1016/S0022-0248(01)01777-8
Osten, H. J. ; Liu, J. P. ; Bugiel, E. et al. / Growth of crystalline praseodymium oxide on silicon. in: Journal of crystal growth. 2002 ; Jahrgang 235, Nr. 1-4. S. 229-234.
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@article{ab3714a9aa4b489a8de4b23f17fd6125,
title = "Growth of crystalline praseodymium oxide on silicon",
abstract = "We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.",
keywords = "A3. Molecular beam epitaxy, B1. Oxides, B1. Rare earth compounds, B2. Dielectric materials",
author = "Osten, {H. J.} and Liu, {J. P.} and E. Bugiel and Mu{\"u}ssig, {H. J.} and P. Zaumseil",
year = "2002",
month = feb,
doi = "10.1016/S0022-0248(01)01777-8",
language = "English",
volume = "235",
pages = "229--234",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Download

TY - JOUR

T1 - Growth of crystalline praseodymium oxide on silicon

AU - Osten, H. J.

AU - Liu, J. P.

AU - Bugiel, E.

AU - Muüssig, H. J.

AU - Zaumseil, P.

PY - 2002/2

Y1 - 2002/2

N2 - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

AB - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B1. Rare earth compounds

KW - B2. Dielectric materials

UR - http://www.scopus.com/inward/record.url?scp=0036467104&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01777-8

DO - 10.1016/S0022-0248(01)01777-8

M3 - Article

AN - SCOPUS:0036467104

VL - 235

SP - 229

EP - 234

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-4

ER -