Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 229-234 |
Seitenumfang | 6 |
Fachzeitschrift | Journal of crystal growth |
Jahrgang | 235 |
Ausgabenummer | 1-4 |
Frühes Online-Datum | 6 Nov. 2001 |
Publikationsstatus | Veröffentlicht - Feb. 2002 |
Extern publiziert | Ja |
Abstract
We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 235, Nr. 1-4, 02.2002, S. 229-234.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Growth of crystalline praseodymium oxide on silicon
AU - Osten, H. J.
AU - Liu, J. P.
AU - Bugiel, E.
AU - Muüssig, H. J.
AU - Zaumseil, P.
PY - 2002/2
Y1 - 2002/2
N2 - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.
AB - We present the results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(0 0 1) surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(1 1 1). These layers can also be overgrown epitaxially with silicon.
KW - A3. Molecular beam epitaxy
KW - B1. Oxides
KW - B1. Rare earth compounds
KW - B2. Dielectric materials
UR - http://www.scopus.com/inward/record.url?scp=0036467104&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01777-8
DO - 10.1016/S0022-0248(01)01777-8
M3 - Article
AN - SCOPUS:0036467104
VL - 235
SP - 229
EP - 234
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -