Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Andrian P. Milanov
  • Ke Xu
  • Apurba Laha
  • Eberhard Bugiel
  • Ramadurai Ranjith
  • Dominik Schwendt
  • H. Jörg Osten
  • Harish Parala
  • Roland A. Fischer
  • Anjana Devi

Organisationseinheiten

Externe Organisationen

  • Ruhr-Universität Bochum
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)36-37
Seitenumfang2
FachzeitschriftJournal of the American Chemical Society
Jahrgang132
Ausgabenummer1
Frühes Online-Datum14 Dez. 2009
PublikationsstatusVeröffentlicht - 13 Jan. 2010

Abstract

(Figure Presented) This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG) 3]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.

ASJC Scopus Sachgebiete

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Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. / Milanov, Andrian P.; Xu, Ke; Laha, Apurba et al.
in: Journal of the American Chemical Society, Jahrgang 132, Nr. 1, 13.01.2010, S. 36-37.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Milanov, AP, Xu, K, Laha, A, Bugiel, E, Ranjith, R, Schwendt, D, Osten, HJ, Parala, H, Fischer, RA & Devi, A 2010, 'Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition', Journal of the American Chemical Society, Jg. 132, Nr. 1, S. 36-37. https://doi.org/10.1021/ja909102j
Milanov, A. P., Xu, K., Laha, A., Bugiel, E., Ranjith, R., Schwendt, D., Osten, H. J., Parala, H., Fischer, R. A., & Devi, A. (2010). Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. Journal of the American Chemical Society, 132(1), 36-37. https://doi.org/10.1021/ja909102j
Milanov AP, Xu K, Laha A, Bugiel E, Ranjith R, Schwendt D et al. Growth of Crystalline Gd2O3 Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H2O-Assisted Atomic Layer Deposition. Journal of the American Chemical Society. 2010 Jan 13;132(1):36-37. Epub 2009 Dez 14. doi: 10.1021/ja909102j
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abstract = "(Figure Presented) This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG) 3]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.",
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AU - Milanov, Andrian P.

AU - Xu, Ke

AU - Laha, Apurba

AU - Bugiel, Eberhard

AU - Ranjith, Ramadurai

AU - Schwendt, Dominik

AU - Osten, H. Jörg

AU - Parala, Harish

AU - Fischer, Roland A.

AU - Devi, Anjana

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AB - (Figure Presented) This work documents the first example of deposition of high-quality Gd2O3 thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG) 3]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.

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