TY - JOUR

T1 - Growth and properties of strained Si1-x-yGexC y layers

AU - Jain, S. C.

AU - Osten, H. J.

AU - Dietrich, B.

AU - Rücker, H.

PY - 1995

Y1 - 1995

N2 - Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained layers are reviewed. The solubility of C in Si is small (3.5*1017 atoms/cm3 near the melting point). However, high-quality strained layers of the alloys with considerably larger C concentrations have been grown using MBE, CVD and solid-phase epitaxy methods. A careful control of the growth rate and temperature is necessary to avoid formation of silicon carbide. In high-quality layers, most of the C atoms occupy lattice positions of the Si or SiGe host crystals and a substitutional alloy is formed although the equilibrium volume of C atoms is only 30% of that of Si. The formation and stability of alloys of atoms with large differences in size is a topic of fundamental interest. Experimental and theoretical investigations have focused on the microscopic structure of substitutional Si 1-x-yGexCy alloys. C compensates the compressive strain produced by Ge in the pseudomorphic layers grown on a Si substrate. From Raman studies of the microscopic strain in substitutional Si1-x-yGexCy alloys it has been concluded that Si-Si bonds experience a considerable local deformation even in strain-compensated alloys. The pair interaction of substitutional C atoms in an Si lattice and the possibility of forming ordered alloys have been studied theoretically. It has been found that the interaction of pairs of substitutional C atoms is attractive for special atomic configurations. Information available on electronic properties is rather meagre. Recent theoretical work shows that the bandgap of the alloy should decrease with C concentration. Experiments to confirm this have not yet been performed. Using strain-compensated alloys it is possible to grow symmetrically strained superlattices without the need of growing buffer layers. Si1-x-yGexCy strained layers are likely to be very useful for passive applications such as buffer layers. Considerably more work is required to determine their utility for active device applications.

AB - Advances made in the growth and properties of CSi and CSiGe pseudomorphic strained layers are reviewed. The solubility of C in Si is small (3.5*1017 atoms/cm3 near the melting point). However, high-quality strained layers of the alloys with considerably larger C concentrations have been grown using MBE, CVD and solid-phase epitaxy methods. A careful control of the growth rate and temperature is necessary to avoid formation of silicon carbide. In high-quality layers, most of the C atoms occupy lattice positions of the Si or SiGe host crystals and a substitutional alloy is formed although the equilibrium volume of C atoms is only 30% of that of Si. The formation and stability of alloys of atoms with large differences in size is a topic of fundamental interest. Experimental and theoretical investigations have focused on the microscopic structure of substitutional Si 1-x-yGexCy alloys. C compensates the compressive strain produced by Ge in the pseudomorphic layers grown on a Si substrate. From Raman studies of the microscopic strain in substitutional Si1-x-yGexCy alloys it has been concluded that Si-Si bonds experience a considerable local deformation even in strain-compensated alloys. The pair interaction of substitutional C atoms in an Si lattice and the possibility of forming ordered alloys have been studied theoretically. It has been found that the interaction of pairs of substitutional C atoms is attractive for special atomic configurations. Information available on electronic properties is rather meagre. Recent theoretical work shows that the bandgap of the alloy should decrease with C concentration. Experiments to confirm this have not yet been performed. Using strain-compensated alloys it is possible to grow symmetrically strained superlattices without the need of growing buffer layers. Si1-x-yGexCy strained layers are likely to be very useful for passive applications such as buffer layers. Considerably more work is required to determine their utility for active device applications.

UR - http://www.scopus.com/inward/record.url?scp=0029386432&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/10/10/001

DO - 10.1088/0268-1242/10/10/001

M3 - Review article

AN - SCOPUS:0029386432

VL - 10

SP - 1289

EP - 1302

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 001

ER -