Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. Fissel
  • M. Czemohorsky
  • R. Dargis
  • H. J. Osten

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OriginalspracheEnglisch
Seiten (von - bis)551-556
Seitenumfang6
FachzeitschriftSuperlattices and microstructures
Jahrgang40
Ausgabenummer4-6
Frühes Online-Datum17 Aug. 2006
PublikationsstatusVeröffentlicht - Okt. 2006

Abstract

We have investigated the growth and electrical properties of crystalline Gd2O3 grown on 6H-SiC(0001) substrates by molecular beam epitaxy. Initially, Gd2O3 islands with hexagonal structure were formed. Further growth resulted in the formation of flat layers in a mixture of [111]-oriented cubic bixbyite and monoclinic structure. The fabricated capacitors with 14 nm Gd2O3 exhibited suitable dielectric properties at room temperature; such as a dielectric constant of ε = 22, a leakage current of 10-8 A/cm2@1 V and breakdown fields >4.3 MV/cm.

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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application. / Fissel, A.; Czemohorsky, M.; Dargis, R. et al.
in: Superlattices and microstructures, Jahrgang 40, Nr. 4-6, 10.2006, S. 551-556.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Fissel A, Czemohorsky M, Dargis R, Osten HJ. Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application. Superlattices and microstructures. 2006 Okt;40(4-6):551-556. Epub 2006 Aug 17. doi: 10.1016/j.spmi.2006.07.002
Fissel, A. ; Czemohorsky, M. ; Dargis, R. et al. / Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application. in: Superlattices and microstructures. 2006 ; Jahrgang 40, Nr. 4-6. S. 551-556.
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AU - Dargis, R.

AU - Osten, H. J.

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KW - High-k dielectrics

KW - I-V

KW - MBE

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