Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 112106 |
| Fachzeitschrift | Applied Physics Letters |
| Jahrgang | 94 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 16 März 2009 |
Abstract
Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied Physics Letters, Jahrgang 94, Nr. 11, 112106, 16.03.2009.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Graphitization process of SiC(0001) studied by electron energy loss spectroscopy
AU - Langer, Thomas
AU - Pfnür, Herbert
AU - Schumacher, H. W.
AU - Tegenkamp, Christoph
PY - 2009/3/16
Y1 - 2009/3/16
N2 - Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers.
AB - Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile analysis in low energy electron diffraction and x-ray photoelectron spectroscopy. In the EELS data both electronic transitions and plasmon losses are sensitive to the interface. The collective in-plane excitations show a characteristic blueshift upon graphitization, while single electron transitions with dipole moments along the surface normal are suppressed for the buffer layer. These dependencies can be used to control the number of epitaxially grown graphene layers.
UR - http://www.scopus.com/inward/record.url?scp=63049097845&partnerID=8YFLogxK
U2 - 10.1063/1.3100776
DO - 10.1063/1.3100776
M3 - Article
AN - SCOPUS:63049097845
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 112106
ER -