Grand canonical Peierls transition in In/Si(111)

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OriginalspracheEnglisch
Aufsatznummer241407
FachzeitschriftPhysical Review B
Jahrgang93
Ausgabenummer24
PublikationsstatusVeröffentlicht - 21 Juni 2016

Abstract

Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.

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Grand canonical Peierls transition in In/Si(111). / Jeckelmann, Eric; Sanna, Simone; Schmidt, Wolf Gero et al.
in: Physical Review B, Jahrgang 93, Nr. 24, 241407, 21.06.2016.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Jeckelmann, E, Sanna, S, Schmidt, WG, Speiser, E & Esser, N 2016, 'Grand canonical Peierls transition in In/Si(111)', Physical Review B, Jg. 93, Nr. 24, 241407. https://doi.org/10.1103/physrevb.93.241407
Jeckelmann, E., Sanna, S., Schmidt, W. G., Speiser, E., & Esser, N. (2016). Grand canonical Peierls transition in In/Si(111). Physical Review B, 93(24), Artikel 241407. https://doi.org/10.1103/physrevb.93.241407
Jeckelmann E, Sanna S, Schmidt WG, Speiser E, Esser N. Grand canonical Peierls transition in In/Si(111). Physical Review B. 2016 Jun 21;93(24):241407. doi: 10.1103/physrevb.93.241407
Jeckelmann, Eric ; Sanna, Simone ; Schmidt, Wolf Gero et al. / Grand canonical Peierls transition in In/Si(111). in: Physical Review B. 2016 ; Jahrgang 93, Nr. 24.
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AU - Sanna, Simone

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AU - Speiser, Eugen

AU - Esser, Norbert

N1 - Publisher Copyright: © 2016 American Physical Society. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

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N2 - Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.

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