Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 064303 |
| Fachzeitschrift | Journal of Applied Physics |
| Jahrgang | 103 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - 19 März 2008 |
Abstract
We explored the structural limits of unconventional electron-beam lithography by directly writing with an electron beam into ultrathin SiO2 films. The obtained structures were analyzed by tunneling microscopy. The Auger excitation process (Knotek-Feibelman mechanism) necessary for electron-stimulated oxygen desorption allows generation of ultrasmall structures. The subsequent processing step combines thermal desorption of the remaining monoxide and simultaneous etching promoted by thermally activated silicon atoms, which turns out to be a strongly anisotropic process close to step edges. Applying this combination of processes to a regularly stepped Si(557) sample, linewidths close to the resolution of the electron microscope of 5 nm were obtained.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of Applied Physics, Jahrgang 103, Nr. 6, 064303, 19.03.2008.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Generation of ultrasmall nanostructures in oxide layers assisted by self-organization
AU - Block, Thomas
AU - Pfnür, Herbert
PY - 2008/3/19
Y1 - 2008/3/19
N2 - We explored the structural limits of unconventional electron-beam lithography by directly writing with an electron beam into ultrathin SiO2 films. The obtained structures were analyzed by tunneling microscopy. The Auger excitation process (Knotek-Feibelman mechanism) necessary for electron-stimulated oxygen desorption allows generation of ultrasmall structures. The subsequent processing step combines thermal desorption of the remaining monoxide and simultaneous etching promoted by thermally activated silicon atoms, which turns out to be a strongly anisotropic process close to step edges. Applying this combination of processes to a regularly stepped Si(557) sample, linewidths close to the resolution of the electron microscope of 5 nm were obtained.
AB - We explored the structural limits of unconventional electron-beam lithography by directly writing with an electron beam into ultrathin SiO2 films. The obtained structures were analyzed by tunneling microscopy. The Auger excitation process (Knotek-Feibelman mechanism) necessary for electron-stimulated oxygen desorption allows generation of ultrasmall structures. The subsequent processing step combines thermal desorption of the remaining monoxide and simultaneous etching promoted by thermally activated silicon atoms, which turns out to be a strongly anisotropic process close to step edges. Applying this combination of processes to a regularly stepped Si(557) sample, linewidths close to the resolution of the electron microscope of 5 nm were obtained.
UR - http://www.scopus.com/inward/record.url?scp=41549092799&partnerID=8YFLogxK
U2 - 10.1063/1.2896413
DO - 10.1063/1.2896413
M3 - Article
AN - SCOPUS:41549092799
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 064303
ER -