GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Tobias Brinker
  • Hendrik Gräber
  • Jens Friebe
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Details

OriginalspracheEnglisch
Titel des Sammelwerks24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
ISBN (elektronisch)9789075815399
ISBN (Print)978-1-6654-8700-9
PublikationsstatusVeröffentlicht - 2022
Veranstaltung24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe - Hanover, Deutschland
Dauer: 5 Sept. 20229 Sept. 2022

Abstract

This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.

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GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage. / Brinker, Tobias; Gräber, Hendrik; Friebe, Jens.
24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2022.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Brinker, T, Gräber, H & Friebe, J 2022, GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage. in 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe, Hanover, Deutschland, 5 Sept. 2022. <https://ieeexplore.ieee.org/document/9907679/authors#authors>
Brinker, T., Gräber, H., & Friebe, J. (2022). GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage. In 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe Institute of Electrical and Electronics Engineers Inc.. https://ieeexplore.ieee.org/document/9907679/authors#authors
Brinker T, Gräber H, Friebe J. GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage. in 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe. Institute of Electrical and Electronics Engineers Inc. 2022
Brinker, Tobias ; Gräber, Hendrik ; Friebe, Jens. / GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage. 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2022.
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title = "GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage",
abstract = "This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.",
keywords = "Gallium Nitride (GaN), Magentic device, Silicon Carbide (SiC), Single phase system, Switching losses",
author = "Tobias Brinker and Hendrik Gr{\"a}ber and Jens Friebe",
note = "Funding Information: Parts of this work were funded by the German Federal Ministry for Economic Affairs and Climate Action under Grant No. 03EE1057A (Voyager-PV) on the basis of a decision by the German Bundestag and also by the Ministry of Science and Culture of Lower Saxony and the Volkswagen Foundation. The authors are responsible for the content of this publication.; 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe ; Conference date: 05-09-2022 Through 09-09-2022",
year = "2022",
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Download

TY - GEN

T1 - GaN HEMT and SiC Diode Commutation Cell based Dual-Buck Single-Phase Inverter with Premagnetized Inductors and Negative Gate Driver Turn-off Voltage

AU - Brinker, Tobias

AU - Gräber, Hendrik

AU - Friebe, Jens

N1 - Funding Information: Parts of this work were funded by the German Federal Ministry for Economic Affairs and Climate Action under Grant No. 03EE1057A (Voyager-PV) on the basis of a decision by the German Bundestag and also by the Ministry of Science and Culture of Lower Saxony and the Volkswagen Foundation. The authors are responsible for the content of this publication.

PY - 2022

Y1 - 2022

N2 - This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.

AB - This paper presents a highly efficient single-phase dual-buck inverter topology for the use in photovoltaic (PV) micro inverters with specific advantages for the application of switching cells composed of Gal-lium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) and Silicon Carbide (SiC) diodes. For this inverter topology, the opportunity to use negative gate driver turn-off voltage with-out affecting the reverse conduction loss is identified as a significant advantage in terms of efficiency and cross talk immunity. However, the low magnetic utilization of the filter inductors is a well-known drawback. Therefore, permanent magnet premagnetization is proposed as a way to alleviate this issue.

KW - Gallium Nitride (GaN)

KW - Magentic device

KW - Silicon Carbide (SiC)

KW - Single phase system

KW - Switching losses

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M3 - Conference contribution

AN - SCOPUS:85141640689

SN - 978-1-6654-8700-9

BT - 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe

Y2 - 5 September 2022 through 9 September 2022

ER -