Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 126-130 |
| Seitenumfang | 5 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 124 |
| Publikationsstatus | Veröffentlicht - 21 Sept. 2017 |
| Veranstaltung | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Deutschland Dauer: 3 Apr. 2017 → 5 Apr. 2017 |
Abstract
This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×1019 cm-3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×1021 cm-3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 107 cm/s which is equal to the thermal velocity.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 124, 21.09.2017, S. 126-130.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2
AU - Min, Byungsul
AU - Krügener, Jan
AU - Müller, Matthias
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: This work was funded by the Federal Ministry for Economic Affairs and Energy (FKZ 0325777). Publisher Copyright: © 2017 The Authors. Published by Elsevier Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/9/21
Y1 - 2017/9/21
N2 - This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×1019 cm-3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×1021 cm-3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 107 cm/s which is equal to the thermal velocity.
AB - This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×1019 cm-3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×1021 cm-3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 107 cm/s which is equal to the thermal velocity.
KW - emitter
KW - junction formation
KW - passivation
KW - recombination
UR - http://www.scopus.com/inward/record.url?scp=85031917776&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.323
DO - 10.1016/j.egypro.2017.09.323
M3 - Conference article
AN - SCOPUS:85031917776
VL - 124
SP - 126
EP - 130
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Y2 - 3 April 2017 through 5 April 2017
ER -