Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 083509 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 98 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - 19 Okt. 2005 |
| Extern publiziert | Ja |
Abstract
The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p -type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 98, Nr. 8, 083509, 19.10.2005.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation rates of iron-acceptor pairs in crystalline silicon
AU - Macdonald, Daniel
AU - Roth, Thomas
AU - Deenapanray, Prakash N.K.
AU - Bothe, Karsten
AU - Pohl, Peter
AU - Schmidt, Jan
PY - 2005/10/19
Y1 - 2005/10/19
N2 - The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p -type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.
AB - The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p -type dopant concentrations and species (B, Ga, and In) near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.
UR - http://www.scopus.com/inward/record.url?scp=27744486765&partnerID=8YFLogxK
U2 - 10.1063/1.2102071
DO - 10.1063/1.2102071
M3 - Article
AN - SCOPUS:27744486765
VL - 98
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 8
M1 - 083509
ER -