Formation of twinning-superlattice regions by artificial stacking of Si layers

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. Fissel
  • E. Bugiel
  • C. R. Wang
  • H. J. Osten

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Details

OriginalspracheEnglisch
Seiten (von - bis)392-397
Seitenumfang6
FachzeitschriftJournal of crystal growth
Jahrgang290
Ausgabenummer2
Frühes Online-Datum17 Apr. 2006
PublikationsstatusVeröffentlicht - 1 Mai 2006

Abstract

We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.

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Formation of twinning-superlattice regions by artificial stacking of Si layers. / Fissel, A.; Bugiel, E.; Wang, C. R. et al.
in: Journal of crystal growth, Jahrgang 290, Nr. 2, 01.05.2006, S. 392-397.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Fissel A, Bugiel E, Wang CR, Osten HJ. Formation of twinning-superlattice regions by artificial stacking of Si layers. Journal of crystal growth. 2006 Mai 1;290(2):392-397. Epub 2006 Apr 17. doi: 10.1016/j.jcrysgro.2006.02.009
Fissel, A. ; Bugiel, E. ; Wang, C. R. et al. / Formation of twinning-superlattice regions by artificial stacking of Si layers. in: Journal of crystal growth. 2006 ; Jahrgang 290, Nr. 2. S. 392-397.
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T1 - Formation of twinning-superlattice regions by artificial stacking of Si layers

AU - Fissel, A.

AU - Bugiel, E.

AU - Wang, C. R.

AU - Osten, H. J.

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N2 - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.

AB - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)( sqrt(3) × sqrt(3))R30°-B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)( sqrt(3) × sqrt(3))R30°-surface covered by at least frac(1, 3) ML boron results in the formation of 180° rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes.

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