Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1900152 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 256 |
| Ausgabenummer | 10 |
| Frühes Online-Datum | 19 Juni 2019 |
| Publikationsstatus | Veröffentlicht - 23 Okt. 2019 |
Abstract
In this study, the growth of Sn on Si(557) surfaces by means of scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission is analyzed. Depending on the Sn submonolayer coverage, various Sn-nanowires are identified. For Sn-coverages above 0.5 ML, ((Formula presented.))- and ((Formula presented.))-reconstructions are found. In particular, these phases cover extended (111)-areas, thus leading to an inhomogeneous refacetting of the Si(557) surface. The (223)-facets between the mini-(111) terraces reveal structures, which resemble a ×2 reconstruction along edges. The initial step structure of the Si(557) surface is maintained for Sn-coverages below 0.5 ML, showing the α-Sn phase on 3 nm wide (111)-terraces. In contrast to the 2D Mott state of α-Sn/Si(111), this confinement seems to quench the correlated electronic phase yielding metallic surface states at 40 K, in accordance with photoemission.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 256, Nr. 10, 1900152, 23.10.2019.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of Sn-Induced Nanowires on Si(557)
AU - Jäger, Monika
AU - Pfnür, Herbert
AU - Fanciulli, Mauro
AU - Weber, Andrew P.
AU - Dil, Jan Hugo
AU - Tegenkamp, Christoph
N1 - Funding information: The final support by the Deutsche Forschungsgemeinschaft through project Te386/10-2 of the FOR1700 Research Unit is gratefully acknowledged.
PY - 2019/10/23
Y1 - 2019/10/23
N2 - In this study, the growth of Sn on Si(557) surfaces by means of scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission is analyzed. Depending on the Sn submonolayer coverage, various Sn-nanowires are identified. For Sn-coverages above 0.5 ML, ((Formula presented.))- and ((Formula presented.))-reconstructions are found. In particular, these phases cover extended (111)-areas, thus leading to an inhomogeneous refacetting of the Si(557) surface. The (223)-facets between the mini-(111) terraces reveal structures, which resemble a ×2 reconstruction along edges. The initial step structure of the Si(557) surface is maintained for Sn-coverages below 0.5 ML, showing the α-Sn phase on 3 nm wide (111)-terraces. In contrast to the 2D Mott state of α-Sn/Si(111), this confinement seems to quench the correlated electronic phase yielding metallic surface states at 40 K, in accordance with photoemission.
AB - In this study, the growth of Sn on Si(557) surfaces by means of scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission is analyzed. Depending on the Sn submonolayer coverage, various Sn-nanowires are identified. For Sn-coverages above 0.5 ML, ((Formula presented.))- and ((Formula presented.))-reconstructions are found. In particular, these phases cover extended (111)-areas, thus leading to an inhomogeneous refacetting of the Si(557) surface. The (223)-facets between the mini-(111) terraces reveal structures, which resemble a ×2 reconstruction along edges. The initial step structure of the Si(557) surface is maintained for Sn-coverages below 0.5 ML, showing the α-Sn phase on 3 nm wide (111)-terraces. In contrast to the 2D Mott state of α-Sn/Si(111), this confinement seems to quench the correlated electronic phase yielding metallic surface states at 40 K, in accordance with photoemission.
KW - scanning tunneling microscopy
KW - Sn nanowires
KW - vicinal Si
UR - http://www.scopus.com/inward/record.url?scp=85067425631&partnerID=8YFLogxK
U2 - 10.1002/pssb.201900152
DO - 10.1002/pssb.201900152
M3 - Article
AN - SCOPUS:85067425631
VL - 256
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 10
M1 - 1900152
ER -