TY - JOUR

T1 - Formation of Si twinning-superlattice

T2 - First step towards Si polytype growth

AU - Fissel, A.

AU - Bugiel, E.

AU - Wang, C. R.

AU - Osten, H. J.

N1 - Funding Information: The authors acknowledge the financial support of the Deutsche Forschungsgemeinschaft (DFG Project FI 726/3-1). Furthermore, the authors also like to thank Michael Seibt from the university of Göttingen for using the TEM equipment.

PY - 2006/10/15

Y1 - 2006/10/15

N2 - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by multi-step molecular beam epitaxy on Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-B surfaces in which boron acts as a subsurfactant. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twins along the [1 1 1] direction separated by a few nanometers. The multi-step procedure consists of repeating several growth, boron deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-surface covered by at least 1/3 ML subsurface boron results in the formation of 180° rotation twins. The presented technology should be suitable to prepare Si polytypes.

AB - We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by multi-step molecular beam epitaxy on Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-B surfaces in which boron acts as a subsurfactant. Twinning-superlattice regions were formed by periodical arrangement of 180° rotation twins along the [1 1 1] direction separated by a few nanometers. The multi-step procedure consists of repeating several growth, boron deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si (1 1 1) (sqrt(3) × sqrt(3)) R 30{ring operator}-surface covered by at least 1/3 ML subsurface boron results in the formation of 180° rotation twins. The presented technology should be suitable to prepare Si polytypes.

KW - Molecular beam epitaxy

KW - Silicon

KW - Superlattice

KW - Twinning

UR - http://www.scopus.com/inward/record.url?scp=33750351275&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2006.06.046

DO - 10.1016/j.mseb.2006.06.046

M3 - Article

AN - SCOPUS:33750351275

VL - 134

SP - 138

EP - 141

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2-3 SPEC. ISS.

ER -