Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 521-526 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 8 |
| Publikationsstatus | Veröffentlicht - 2011 |
Abstract
Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
ASJC Scopus Sachgebiete
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Energy Procedia, Jahrgang 8, 2011, S. 521-526.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation
AU - Mader, Christoph
AU - Bock, Robert
AU - Müller, Jens
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: This work is supported by the State of Lower Saxony.
PY - 2011
Y1 - 2011
N2 - Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
AB - Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 / SiNx passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p+ region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 ± 100 cm/s for local Al-p+ regions on p-type silicon wafers of 1.5 ωcm resistivity. The recombination velocity between the contacts is determined to 4.4 ± 0.5 cm/s after deposition.
KW - Alloying
KW - Aluminum doped silicon
KW - Crystalline silicon solar cell
KW - In-line evaporation
KW - Local contacts
UR - http://www.scopus.com/inward/record.url?scp=80052083487&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.176
DO - 10.1016/j.egypro.2011.06.176
M3 - Article
AN - SCOPUS:80052083487
VL - 8
SP - 521
EP - 526
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -