Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1720-1722 |
| Seitenumfang | 3 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 95 |
| Ausgabenummer | 7 |
| Frühes Online-Datum | 4 März 2011 |
| Publikationsstatus | Veröffentlicht - Juli 2011 |
| Extern publiziert | Ja |
Abstract
Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Solar Energy Materials and Solar Cells, Jahrgang 95, Nr. 7, 07.2011, S. 1720-1722.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of highly aluminum-doped p-type silicon regions by in-line high-rate evaporation
AU - Mader, Christoph
AU - Bock, Robert
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: This work is supported by the State of Lower Saxony.
PY - 2011/7
Y1 - 2011/7
N2 - Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
AB - Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 °C during deposition an Al-doped p region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695±65 fA/cm2 for the fully metalized Al-p regions, which corresponds to an implied solar cell open-circuit voltage of 635±2 mV.
KW - Alloying
KW - Aluminum-doped silicon
KW - Crystalline silicon solar cell
KW - In-line evaporation
UR - http://www.scopus.com/inward/record.url?scp=79955468972&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.01.039
DO - 10.1016/j.solmat.2011.01.039
M3 - Article
AN - SCOPUS:79955468972
VL - 95
SP - 1720
EP - 1722
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 7
ER -