Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 105007 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 25 |
| Ausgabenummer | 10 |
| Frühes Online-Datum | 9 Sept. 2010 |
| Publikationsstatus | Veröffentlicht - Okt. 2010 |
| Extern publiziert | Ja |
Abstract
We show that the carrier lifetime in highly aluminum-doped silicon regions experiences a pronounced degradation during thermal treatment at temperatures above 850 °C. The defect formation is shown to be directly linked to the simultaneous presence of oxygen and aluminum and thus can be attributed to the formation of aluminum-oxygen complexes. Temperature-dependent measurements of the defect generation rate provide evidence that the formation of the Al-O complex is thermally activated with an activation energy of 0.25 ± 0.08 eV.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 25, Nr. 10, 105007, 10.2010.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of aluminum-oxygen complexes in highly aluminum-doped silicon
AU - Bock, Robert
AU - Altermatt, Pietro P.
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under contract no 0327666 (ALU+ ).
PY - 2010/10
Y1 - 2010/10
N2 - We show that the carrier lifetime in highly aluminum-doped silicon regions experiences a pronounced degradation during thermal treatment at temperatures above 850 °C. The defect formation is shown to be directly linked to the simultaneous presence of oxygen and aluminum and thus can be attributed to the formation of aluminum-oxygen complexes. Temperature-dependent measurements of the defect generation rate provide evidence that the formation of the Al-O complex is thermally activated with an activation energy of 0.25 ± 0.08 eV.
AB - We show that the carrier lifetime in highly aluminum-doped silicon regions experiences a pronounced degradation during thermal treatment at temperatures above 850 °C. The defect formation is shown to be directly linked to the simultaneous presence of oxygen and aluminum and thus can be attributed to the formation of aluminum-oxygen complexes. Temperature-dependent measurements of the defect generation rate provide evidence that the formation of the Al-O complex is thermally activated with an activation energy of 0.25 ± 0.08 eV.
UR - http://www.scopus.com/inward/record.url?scp=78649944571&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/25/10/105007
DO - 10.1088/0268-1242/25/10/105007
M3 - Article
AN - SCOPUS:78649944571
VL - 25
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 105007
ER -