Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 9-14 |
| Seitenumfang | 6 |
| Fachzeitschrift | Crystal research and technology |
| Jahrgang | 36 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 12 März 2001 |
Abstract
Zeolite Y was steamed at 873 K for 7 h. This thermochemical treatment increases the Si/Al ratio of the zeolite framework from 2.4 to 3.8 under the formation of non-framework aluminium species. Successive leaching in 0.25 M KOH at 353 K for 24 h decreases the Si/Al ratio of the zeolite to 2.6 due to the formation of a X-ray amorphous potassium aluminosilicate surface layer.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Werkstoffwissenschaften (insg.)
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Crystal research and technology, Jahrgang 36, Nr. 1, 12.03.2001, S. 9-14.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of alkali-aluminosilicate layers on thermochemically dealuminated Y zeolites by alkaline leaching
AU - Lutz, W.
AU - Heidemann, D.
AU - Rüscher, C. H.
AU - Buhl, J. Chr
PY - 2001/3/12
Y1 - 2001/3/12
N2 - Zeolite Y was steamed at 873 K for 7 h. This thermochemical treatment increases the Si/Al ratio of the zeolite framework from 2.4 to 3.8 under the formation of non-framework aluminium species. Successive leaching in 0.25 M KOH at 353 K for 24 h decreases the Si/Al ratio of the zeolite to 2.6 due to the formation of a X-ray amorphous potassium aluminosilicate surface layer.
AB - Zeolite Y was steamed at 873 K for 7 h. This thermochemical treatment increases the Si/Al ratio of the zeolite framework from 2.4 to 3.8 under the formation of non-framework aluminium species. Successive leaching in 0.25 M KOH at 353 K for 24 h decreases the Si/Al ratio of the zeolite to 2.6 due to the formation of a X-ray amorphous potassium aluminosilicate surface layer.
KW - Alkaline leaching
KW - Dealumination
KW - Realumination
KW - Zeolite
UR - http://www.scopus.com/inward/record.url?scp=0035057552&partnerID=8YFLogxK
U2 - 10.1002/1521-4079(200101)36:1<9::AID-CRAT9>3.0.CO;2-T
DO - 10.1002/1521-4079(200101)36:1<9::AID-CRAT9>3.0.CO;2-T
M3 - Article
AN - SCOPUS:0035057552
VL - 36
SP - 9
EP - 14
JO - Crystal research and technology
JF - Crystal research and technology
SN - 0232-1300
IS - 1
ER -