Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 144103 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 120 |
| Ausgabenummer | 14 |
| Frühes Online-Datum | 13 Okt. 2016 |
| Publikationsstatus | Veröffentlicht - 14 Okt. 2016 |
Abstract
The effects of nitrogen incorporation by high-dose ion implantation in epitaxial Gd2O3 films on Si(111) followed by annealing have been investigated. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in gadolinium oxide (Gd2O3). The nitrogen content in the oxide layer has been altered by changing the implantation dose. The impact of nitrogen incorporation on Gd-O bonding is studied using X-ray photoelectron spectroscopy. A shift in the Gd and O peak positions indicate the presence of nitrogen in the layer. Raman spectroscopy reveals heavy structural changes. The newly appearing structure is crystalline, but not in agreement with either the known bixbyite (Gd2O3) or rocksalt (GdN) structure. Electron microscopic investigations reveal the formation of cracks and small areas with lower densities or even voids. That structure exhibits similarities with transmission electron microscopy images of gadolinium nitride (GdN) layers. The electronic band gap of Gd2O3 estimated from O1s plasmon energy loss measurements was found to decrease significantly by the incorporation of nitrogen. Reduction in the valence band and conduction band offset is obtained as a function of implantation dose.
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in: Journal of applied physics, Jahrgang 120, Nr. 14, 144103, 14.10.2016.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon
AU - Joseph, A.
AU - Tetzlaff, D.
AU - Schmidt, J.
AU - Böttger, R.
AU - Wietler, T. F.
AU - Osten, H. J.
PY - 2016/10/14
Y1 - 2016/10/14
N2 - The effects of nitrogen incorporation by high-dose ion implantation in epitaxial Gd2O3 films on Si(111) followed by annealing have been investigated. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in gadolinium oxide (Gd2O3). The nitrogen content in the oxide layer has been altered by changing the implantation dose. The impact of nitrogen incorporation on Gd-O bonding is studied using X-ray photoelectron spectroscopy. A shift in the Gd and O peak positions indicate the presence of nitrogen in the layer. Raman spectroscopy reveals heavy structural changes. The newly appearing structure is crystalline, but not in agreement with either the known bixbyite (Gd2O3) or rocksalt (GdN) structure. Electron microscopic investigations reveal the formation of cracks and small areas with lower densities or even voids. That structure exhibits similarities with transmission electron microscopy images of gadolinium nitride (GdN) layers. The electronic band gap of Gd2O3 estimated from O1s plasmon energy loss measurements was found to decrease significantly by the incorporation of nitrogen. Reduction in the valence band and conduction band offset is obtained as a function of implantation dose.
AB - The effects of nitrogen incorporation by high-dose ion implantation in epitaxial Gd2O3 films on Si(111) followed by annealing have been investigated. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in gadolinium oxide (Gd2O3). The nitrogen content in the oxide layer has been altered by changing the implantation dose. The impact of nitrogen incorporation on Gd-O bonding is studied using X-ray photoelectron spectroscopy. A shift in the Gd and O peak positions indicate the presence of nitrogen in the layer. Raman spectroscopy reveals heavy structural changes. The newly appearing structure is crystalline, but not in agreement with either the known bixbyite (Gd2O3) or rocksalt (GdN) structure. Electron microscopic investigations reveal the formation of cracks and small areas with lower densities or even voids. That structure exhibits similarities with transmission electron microscopy images of gadolinium nitride (GdN) layers. The electronic band gap of Gd2O3 estimated from O1s plasmon energy loss measurements was found to decrease significantly by the incorporation of nitrogen. Reduction in the valence band and conduction band offset is obtained as a function of implantation dose.
UR - http://www.scopus.com/inward/record.url?scp=84991573445&partnerID=8YFLogxK
U2 - 10.1063/1.4964431
DO - 10.1063/1.4964431
M3 - Article
AN - SCOPUS:84991573445
VL - 120
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 14
M1 - 144103
ER -