Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 4646-4653 |
| Seitenumfang | 8 |
| Fachzeitschrift | ACS Applied Energy Materials |
| Jahrgang | 4 |
| Ausgabenummer | 5 |
| Frühes Online-Datum | 22 Apr. 2021 |
| Publikationsstatus | Veröffentlicht - 24 Mai 2021 |
Abstract
Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 »mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.
ASJC Scopus Sachgebiete
- Chemische Verfahrenstechnik (insg.)
- Chemische Verfahrenstechnik (sonstige)
- Energie (insg.)
- Energieanlagenbau und Kraftwerkstechnik
- Chemie (insg.)
- Elektrochemie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: ACS Applied Energy Materials, Jahrgang 4, Nr. 5, 24.05.2021, S. 4646-4653.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Firing-Stable PECVD SiO xN y/n-Poly-Si Surface Passivation for Silicon Solar Cells
AU - Stöhr, Maximilian
AU - Aprojanz, Johannes
AU - Brendel, Rolf
AU - Dullweber, Thorsten
N1 - Funding Information: The authors thank the German Federal Ministry of Economic Affairs and Energy (BMWi) for funding this work within the research project UltraPERC (Contract no. 0324294C). We thank Birgit Beier, Melanie Ripke, and Sabrina Schimanke (all from ISFH) for sample processing. The content is the responsibility of the authors.
PY - 2021/5/24
Y1 - 2021/5/24
N2 - Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 »mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.
AB - Passivating contacts based on SiOx/poly-Si exhibit excellent contact and surface passivation properties enabling very high solar cell conversion efficiencies. In this paper, we investigate and optimize the plasma-enhanced chemical vapor deposition (PECVD) of SiOxNy/n-a-Si stacks, their subsequent annealing to SiOxNy/n-poly-Si stacks followed by PECVD SiNx deposition and firing. We eliminate blistering of the poly-Si layer by enabling a controlled hydrogen out-diffusion during the annealing step. Whereas the J0 of thermal SiOx/n-poly-Si stacks degrade after firing, PECVD SiOxNy/n-poly-Si stacks exhibit excellent firing stability enabling J0 values down to 1.3 fA/cm2 after firing which corresponds to an outstanding implied VOC of 744 »mV. The application of different hydrogenation processes to the thermal SiOx/n-poly-Si and PECVD SiOxNy/n-poly-Si stacks reveals that both stacks achieve excellent passivation properties with J0 = 1.5 fA/cm2 after maximum hydrogenation. However, only the PECVD SiOxNy/n-poly-Si stack maintains this excellent surface passivation after firing possibly due to a superior capability to retain the hydrogen at the c-Si/SiOxNy interface during firing and thus demonstrates the potential as a future manufacturing process sequence.
KW - blistering
KW - firing stability
KW - passivating contacts
KW - PECVD deposition
KW - silicon solar cells
KW - SiO N /poly-Si
UR - http://www.scopus.com/inward/record.url?scp=85106625468&partnerID=8YFLogxK
U2 - 10.1021/acsaem.1c00265
DO - 10.1021/acsaem.1c00265
M3 - Article
AN - SCOPUS:85106625468
VL - 4
SP - 4646
EP - 4653
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 5
ER -