Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 180-185 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 96 |
| Frühes Online-Datum | 13 Okt. 2011 |
| Publikationsstatus | Veröffentlicht - Jan. 2012 |
Abstract
In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Solar Energy Materials and Solar Cells, Jahrgang 96, 01.2012, S. 180-185.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells
AU - Gatz, S.
AU - Dullweber, T.
AU - Mertens, V.
AU - Einsele, F.
AU - Brendel, R.
PY - 2012/1
Y1 - 2012/1
N2 - In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
AB - In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of screen-printed metallization pastes. However, the stability of surface passivation layers during high temperature contact formation is a major challenge. Here, we investigate the thermal stability of the surface passivation by amorphous silicon nitride double layers (SiNy/SiN x). The SiNy passivation layer is silicon rich with refractive index larger than 3. Whereas the SiNx capping layer has a refractive index of 2.05. Compared to pure hydrogenated amorphous silicon, the nitrogen in the SiNy passivation layer improves the firing stability. We achieve an effective surface recombination velocity after a conventional co-firing process of (5.2±2) cm/s on p-type (1.5 Ωcm) FZ-silicon wafers at an injection density of 1015 cm-3. An analysis of the improved firing stability is presented based on FTIR and hydrogen effusion measurements. The incorporation of an SiNy/SiNx stack into the passivated rear of Cz silicon screen-printed solar cells results in an energy conversion efficiency of 18.3% compared to reference solar cells with conventional aluminum back surface field showing 17.9% efficiency. The short circuit current density increases by up to 0.8 mA/cm2 compared to conventional solar cells due to the improved optical reflectance and rear side surface passivation.
KW - PERC solar cell
KW - Screen-printing
KW - Silicon nitride
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=80855134460&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.09.051
DO - 10.1016/j.solmat.2011.09.051
M3 - Article
AN - SCOPUS:80855134460
VL - 96
SP - 180
EP - 185
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -