Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1703-1706 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 36 |
| Ausgabenummer | 11-12 SPEC. ISS. |
| Publikationsstatus | Veröffentlicht - 1996 |
Abstract
For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 36, Nr. 11-12 SPEC. ISS., 1996, S. 1703-1706.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Finite element investigations of mechanical stress in metallization structures
AU - Weide, K.
AU - Yu, X.
AU - Menhorn, F.
N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
AB - For different double layer metallization structures the thermal-electrical-mechanical stress due to the mismatch of thermal expansion coefficients and elastic moduli was calculated by finite element analysis. A quantitative comparison between a conventional structure with small aluminum step coverage as well as an aluminum plug, a tungsten filled via structure and a structure with a barrier layer was done. The influence of applied current density, metallization length and passivation thickness and material was investigated for the tungsten filled via structure.
UR - http://www.scopus.com/inward/record.url?scp=16344373055&partnerID=8YFLogxK
U2 - 10.1016/0026-2714(96)00178-3
DO - 10.1016/0026-2714(96)00178-3
M3 - Article
AN - SCOPUS:16344373055
VL - 36
SP - 1703
EP - 1706
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 11-12 SPEC. ISS.
ER -