Femtosecond pulse damage behavior of oxide dielectric thin films

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Mark Mero
  • Jianhua Liu
  • Joachim Zeller
  • Wolfgang Rudolph
  • Kai Starke
  • Detlev Ristau

Externe Organisationen

  • University of New Mexico
  • Fudan University
  • Laser Zentrum Hannover e.V. (LZH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksLaser-Induced Damage in Optical Materials: 2003
Untertitel35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado
ErscheinungsortBellingham
Herausgeber (Verlag)SPIE
Seiten8-16
Seitenumfang9
ISBN (Print)0-8194-5163-0
PublikationsstatusVeröffentlicht - 10 Juni 2004
Extern publiziertJa
Veranstaltung35th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials 2003 - Boulder, CO, USA / Vereinigte Staaten
Dauer: 22 Sept. 2003 → 24 Sept. 2003

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Herausgeber (Verlag)SPIE
Band5273
ISSN (Print)0277-786X

Abstract

Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

ASJC Scopus Sachgebiete

Zitieren

Femtosecond pulse damage behavior of oxide dielectric thin films. / Mero, Mark; Liu, Jianhua; Zeller, Joachim et al.
Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham: SPIE, 2004. S. 8-16 (Proceedings of SPIE - The International Society for Optical Engineering; Band 5273).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Mero, M, Liu, J, Zeller, J, Rudolph, W, Starke, K & Ristau, D 2004, Femtosecond pulse damage behavior of oxide dielectric thin films. in Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Proceedings of SPIE - The International Society for Optical Engineering, Bd. 5273, SPIE, Bellingham, S. 8-16, 35th Annual Boulder Damage Symposium, Boulder, CO, USA / Vereinigte Staaten, 22 Sept. 2003. https://doi.org/10.1117/12.524571
Mero, M., Liu, J., Zeller, J., Rudolph, W., Starke, K., & Ristau, D. (2004). Femtosecond pulse damage behavior of oxide dielectric thin films. In Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado (S. 8-16). (Proceedings of SPIE - The International Society for Optical Engineering; Band 5273). SPIE. https://doi.org/10.1117/12.524571
Mero M, Liu J, Zeller J, Rudolph W, Starke K, Ristau D. Femtosecond pulse damage behavior of oxide dielectric thin films. in Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham: SPIE. 2004. S. 8-16. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.524571
Mero, Mark ; Liu, Jianhua ; Zeller, Joachim et al. / Femtosecond pulse damage behavior of oxide dielectric thin films. Laser-Induced Damage in Optical Materials: 2003: 35th Annual Boulder Damage Symposium proceedings ; 22 - 24 September 2003, Boulder, Colorado. Bellingham : SPIE, 2004. S. 8-16 (Proceedings of SPIE - The International Society for Optical Engineering).
Download
@inproceedings{c88a2f2d9a414c7ba081386e820ef19b,
title = "Femtosecond pulse damage behavior of oxide dielectric thin films",
abstract = "Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.",
keywords = "Laser-induced breakdown, Strong field ionization, Ultrafast processes in condensed matter",
author = "Mark Mero and Jianhua Liu and Joachim Zeller and Wolfgang Rudolph and Kai Starke and Detlev Ristau",
year = "2004",
month = jun,
day = "10",
doi = "10.1117/12.524571",
language = "English",
isbn = "0-8194-5163-0",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
pages = "8--16",
booktitle = "Laser-Induced Damage in Optical Materials: 2003",
address = "United States",
note = "35th Annual Boulder Damage Symposium : Laser-Induced Damage in Optical Materials 2003 ; Conference date: 22-09-2003 Through 24-09-2003",

}

Download

TY - GEN

T1 - Femtosecond pulse damage behavior of oxide dielectric thin films

AU - Mero, Mark

AU - Liu, Jianhua

AU - Zeller, Joachim

AU - Rudolph, Wolfgang

AU - Starke, Kai

AU - Ristau, Detlev

PY - 2004/6/10

Y1 - 2004/6/10

N2 - Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

AB - Pulse duration and band-gap scaling of the laser breakdown threshold fluence of oxide dielectrics were measured using various (TiO2, Ta2O5, HfO2, Al2O3, and SiO2) single layer thin films. The observed scaling with pulse duration was explained by an empirical model including multi-photon and avalanche ionization, and conduction band electron decay. The results suggest the formation of self-trapped excitons on a sub-ps time-scale, which can cause significant energy transfer to the lattice. At constant pulse duration, the band-gap scaling was found to be approximately linear. This linear scaling can be explained by the Keldysh photo-ionization theory and avalanche ionization in the flux-doubling approximation.

KW - Laser-induced breakdown

KW - Strong field ionization

KW - Ultrafast processes in condensed matter

UR - http://www.scopus.com/inward/record.url?scp=5544226777&partnerID=8YFLogxK

U2 - 10.1117/12.524571

DO - 10.1117/12.524571

M3 - Conference contribution

AN - SCOPUS:5544226777

SN - 0-8194-5163-0

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 8

EP - 16

BT - Laser-Induced Damage in Optical Materials: 2003

PB - SPIE

CY - Bellingham

T2 - 35th Annual Boulder Damage Symposium

Y2 - 22 September 2003 through 24 September 2003

ER -