Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • V. A. Volodin
  • T. T. Korchagina
  • J. Koch
  • B. N. Chichkov

Externe Organisationen

  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • Novosibirsk State University
  • Laser Zentrum Hannover e.V. (LZH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1820-1823
Seitenumfang4
FachzeitschriftPhysica E: Low-Dimensional Systems and Nanostructures
Jahrgang42
Ausgabenummer6
PublikationsstatusVeröffentlicht - 28 Dez. 2009
Extern publiziertJa

Abstract

Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

ASJC Scopus Sachgebiete

Zitieren

Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films. / Volodin, V. A.; Korchagina, T. T.; Koch, J. et al.
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 42, Nr. 6, 28.12.2009, S. 1820-1823.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Volodin VA, Korchagina TT, Koch J, Chichkov BN. Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films. Physica E: Low-Dimensional Systems and Nanostructures. 2009 Dez 28;42(6):1820-1823. doi: 10.1016/j.physe.2009.12.034
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abstract = "Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.",
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TY - JOUR

T1 - Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films

AU - Volodin, V. A.

AU - Korchagina, T. T.

AU - Koch, J.

AU - Chichkov, B. N.

PY - 2009/12/28

Y1 - 2009/12/28

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AB - Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

KW - Femtosecond laser crystallization

KW - Raman scattering

KW - Silicon nanoclusters

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