Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • Vladimir A. Volodin
  • Taisiya T. Korchagina
  • Gennadiy N. Kamaev
  • Aleksandr Kh Antonenko
  • Jurgen Koch
  • Boris N. Chichkov

Externe Organisationen

  • RAS - Institute of Semiconductor Physics, Siberian Branch
  • Novosibirsk State University
  • Laser Zentrum Hannover e.V. (LZH)
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Details

OriginalspracheEnglisch
Titel des SammelwerksInternational Conference on Micro- and Nano-Electronics 2009
PublikationsstatusVeröffentlicht - 26 Feb. 2010
Extern publiziertJa
VeranstaltungInternational Conference on Micro- and Nano-Electronics 2009 - Zvenigorod, Russland
Dauer: 5 Okt. 2009 → 9 Okt. 2009

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Band7521
ISSN (Print)0277-786X

Abstract

Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

ASJC Scopus Sachgebiete

Zitieren

Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. / Volodin, Vladimir A.; Korchagina, Taisiya T.; Kamaev, Gennadiy N. et al.
International Conference on Micro- and Nano-Electronics 2009. 2010. 75210X (Proceedings of SPIE - The International Society for Optical Engineering; Band 7521).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Volodin, VA, Korchagina, TT, Kamaev, GN, Antonenko, AK, Koch, J & Chichkov, BN 2010, Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. in International Conference on Micro- and Nano-Electronics 2009., 75210X, Proceedings of SPIE - The International Society for Optical Engineering, Bd. 7521, International Conference on Micro- and Nano-Electronics 2009, Zvenigorod, Russland, 5 Okt. 2009. https://doi.org/10.1117/12.853385
Volodin, V. A., Korchagina, T. T., Kamaev, G. N., Antonenko, A. K., Koch, J., & Chichkov, B. N. (2010). Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. In International Conference on Micro- and Nano-Electronics 2009 Artikel 75210X (Proceedings of SPIE - The International Society for Optical Engineering; Band 7521). https://doi.org/10.1117/12.853385
Volodin VA, Korchagina TT, Kamaev GN, Antonenko AK, Koch J, Chichkov BN. Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. in International Conference on Micro- and Nano-Electronics 2009. 2010. 75210X. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.853385
Volodin, Vladimir A. ; Korchagina, Taisiya T. ; Kamaev, Gennadiy N. et al. / Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. International Conference on Micro- and Nano-Electronics 2009. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.",
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T1 - Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films

AU - Volodin, Vladimir A.

AU - Korchagina, Taisiya T.

AU - Kamaev, Gennadiy N.

AU - Antonenko, Aleksandr Kh

AU - Koch, Jurgen

AU - Chichkov, Boris N.

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N2 - Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

AB - Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

KW - non-refractory substrates

KW - pulse laser annealing

KW - Raman spectroscopy

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KW - silicon-rich nitride films

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