Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1900167 |
| Fachzeitschrift | physica status solidi (b) |
| Jahrgang | 257 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 2 Aug. 2019 |
| Publikationsstatus | Veröffentlicht - 9 Jan. 2020 |
Abstract
A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: physica status solidi (b), Jahrgang 257, Nr. 1, 1900167, 09.01.2020.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon
AU - Schmidt, Jan
AU - Bothe, Karsten
AU - Voronkov, Vladimir V.
AU - Falster, Robert
N1 - Funding Information: J.S. and K.B. acknowledge the financial support by the German State of Lower Saxony.
PY - 2020/1/9
Y1 - 2020/1/9
N2 - A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled.
AB - A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boron–oxygen recombination centers with strongly differing recombination properties for the fast and slow stages of LID, whereas more recent studies found only a single center for both stages. To resolve this controversy, the historic silicon samples of these previous examinations are re-examined in this study after more than one decade. It is found that, in the historic samples, the fast stage can be either described by two different centers or a mixture of the two, depending on the duration of previous dark annealing. A possible solution is suggested based on the involvement of different activating impurities in the boron–oxygen defect. In dark-annealed samples, the defect consisting of boron, oxygen, and the activation impurity is present in two latent configurations, which reconfigure during LID at a fast and a slow stage. In the examined historic silicon samples, which did not undergo a gettering pretreatment, a significant concentration of an additional boron–oxygen defect with a different kind of activating impurity attached exists. The historic and modern results are thus reconciled.
KW - defects
KW - lifetime
KW - light-induced degradation (LID)
KW - recombination
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=85071119424&partnerID=8YFLogxK
U2 - 10.1002/pssb.201900167
DO - 10.1002/pssb.201900167
M3 - Article
VL - 257
JO - physica status solidi (b)
JF - physica status solidi (b)
SN - 0370-1972
IS - 1
M1 - 1900167
ER -