Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1305-1308 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 0 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 18 Juni 2003 |
| Veranstaltung | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Dauer: 30 Sept. 2002 → 3 Okt. 2002 |
Abstract
We investigate a semiconductor single-electron tunnelling transistor (SET) in the limit of extremely strong coupling to the leads. Several consecutive Fano resonances are observed in transport experiments instead of the regular Coulomb resonances. We quantitatively investigate the lineshapes of the Fano resonances. The observation of Fano resonances in an SET is attributed to the simultaneous presence of a resonant and a continuous conductance channel through the device. We discuss the nature of the second conductance channel.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 0, Nr. 4, 18.06.2003, S. 1305-1308.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Fano resonances in semiconductor quantum dots
AU - Fühner, C.
AU - Keyser, U. F.
AU - Haug, R. J.
AU - Reuter, D.
AU - Wieck, A. D.
PY - 2003/6/18
Y1 - 2003/6/18
N2 - We investigate a semiconductor single-electron tunnelling transistor (SET) in the limit of extremely strong coupling to the leads. Several consecutive Fano resonances are observed in transport experiments instead of the regular Coulomb resonances. We quantitatively investigate the lineshapes of the Fano resonances. The observation of Fano resonances in an SET is attributed to the simultaneous presence of a resonant and a continuous conductance channel through the device. We discuss the nature of the second conductance channel.
AB - We investigate a semiconductor single-electron tunnelling transistor (SET) in the limit of extremely strong coupling to the leads. Several consecutive Fano resonances are observed in transport experiments instead of the regular Coulomb resonances. We quantitatively investigate the lineshapes of the Fano resonances. The observation of Fano resonances in an SET is attributed to the simultaneous presence of a resonant and a continuous conductance channel through the device. We discuss the nature of the second conductance channel.
UR - http://www.scopus.com/inward/record.url?scp=84875097828&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303077
DO - 10.1002/pssc.200303077
M3 - Conference article
AN - SCOPUS:84875097828
VL - 0
SP - 1305
EP - 1308
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 4
T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002
Y2 - 30 September 2002 through 3 October 2002
ER -