Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 926-932 |
| Seitenumfang | 7 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 38 |
| Frühes Online-Datum | 5 Sept. 2013 |
| Publikationsstatus | Veröffentlicht - 2013 |
| Veranstaltung | 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Deutschland Dauer: 25 März 2013 → 27 März 2013 |
Abstract
Ultra-thin silicon wafer have to withstand forces and stresses during handling procedures without breakage. Here we investigate the failure stresses of ∼30 μm thick monocrystalline silicon films produced with the porous silicon process by use of a three line bending setup. We use a finite element simulation in order to evaluate the experiments and conclude that the porous silicon layers break at stresses comparable to those of silicon wafers with standard thickness. The edge preparation has a large impact on the failure stress. For samples with manually cleaved edges the failure stress surpasses 600 MPa, which is the largest stress that is accessible with our testing setup.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 38, 2013, S. 926-932.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Failure Stress of Epitaxial Silicon Thin Films
AU - Käsewieter, Jörg
AU - Kajari-Schröder, Sarah
AU - Niendorf, Thomas
AU - Brendel, Rolf
PY - 2013
Y1 - 2013
N2 - Ultra-thin silicon wafer have to withstand forces and stresses during handling procedures without breakage. Here we investigate the failure stresses of ∼30 μm thick monocrystalline silicon films produced with the porous silicon process by use of a three line bending setup. We use a finite element simulation in order to evaluate the experiments and conclude that the porous silicon layers break at stresses comparable to those of silicon wafers with standard thickness. The edge preparation has a large impact on the failure stress. For samples with manually cleaved edges the failure stress surpasses 600 MPa, which is the largest stress that is accessible with our testing setup.
AB - Ultra-thin silicon wafer have to withstand forces and stresses during handling procedures without breakage. Here we investigate the failure stresses of ∼30 μm thick monocrystalline silicon films produced with the porous silicon process by use of a three line bending setup. We use a finite element simulation in order to evaluate the experiments and conclude that the porous silicon layers break at stresses comparable to those of silicon wafers with standard thickness. The edge preparation has a large impact on the failure stress. For samples with manually cleaved edges the failure stress surpasses 600 MPa, which is the largest stress that is accessible with our testing setup.
KW - Failure stress
KW - Handling
KW - PSI
KW - Silicon layer
KW - Ultra-thin
UR - http://www.scopus.com/inward/record.url?scp=84898731698&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.07.366
DO - 10.1016/j.egypro.2013.07.366
M3 - Conference article
AN - SCOPUS:84898731698
VL - 38
SP - 926
EP - 932
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013
Y2 - 25 March 2013 through 27 March 2013
ER -