Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 6-10 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 38 |
| Ausgabenummer | 1-2 |
| Frühes Online-Datum | 16 Dez. 2006 |
| Publikationsstatus | Veröffentlicht - Apr. 2007 |
Abstract
Single-crystalline double-barrier Gd2O3/Si/Gd2O3 nanostructures on Si(1 1 1) were prepared using molecular beam epitaxy. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. The I-V characteristic of the obtained nanostructures exhibited resonant tunneling at low temperatures.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 38, Nr. 1-2, 04.2007, S. 6-10.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Fabrication of single-crystalline insulator/Si/insulator double-barrier nanostructure using cooperative vapor-solid-phase epitaxy
AU - Osten, H. J.
AU - Kuehne, D.
AU - Bugiel, E.
AU - Fissel, A.
PY - 2007/4
Y1 - 2007/4
N2 - Single-crystalline double-barrier Gd2O3/Si/Gd2O3 nanostructures on Si(1 1 1) were prepared using molecular beam epitaxy. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. The I-V characteristic of the obtained nanostructures exhibited resonant tunneling at low temperatures.
AB - Single-crystalline double-barrier Gd2O3/Si/Gd2O3 nanostructures on Si(1 1 1) were prepared using molecular beam epitaxy. Ultra-thin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. The I-V characteristic of the obtained nanostructures exhibited resonant tunneling at low temperatures.
KW - Epitaxy
KW - Nanostructure
KW - Oxide
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=34147121167&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2006.12.012
DO - 10.1016/j.physe.2006.12.012
M3 - Article
AN - SCOPUS:34147121167
VL - 38
SP - 6
EP - 10
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-2
ER -