Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2023-2025 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 81 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 9 Sept. 2002 |
Abstract
We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 81, Nr. 11, 09.09.2002, S. 2023-2025.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
AU - Regul, J.
AU - Keyser, U. F.
AU - Paesler, M.
AU - Hohls, F.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Malavé, A.
AU - Oesterschulze, E.
AU - Reuter, D.
AU - Wieck, A. D.
PY - 2002/9/9
Y1 - 2002/9/9
N2 - We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.
AB - We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.
UR - http://www.scopus.com/inward/record.url?scp=79956034537&partnerID=8YFLogxK
U2 - 10.1063/1.1506417
DO - 10.1063/1.1506417
M3 - Article
AN - SCOPUS:79956034537
VL - 81
SP - 2023
EP - 2025
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 11
ER -