Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 681-684 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 224 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 1 Apr. 2001 |
Abstract
We are using an atomic force microscope for the direct fabrication of low-dimensional quantum structures in GaAs/AlGaAs heterostructures. By combining mechanical nanolithography with current-controlled local oxidation it is possible to design devices such as a single-electron transistor with different shapes. In this step-by-step process the devices can be tested after every step of the nanolithography, which allows a very controlled fabrication of quantum dots. Here we present our experiments on systems with 2D-0D-2D and 2D-1D-2D tunneling characteristics.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 224, Nr. 3, 01.04.2001, S. 681-684.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Fabrication of quantum dots with scanning probe nanolithography
AU - Keyser, U. F.
AU - Schumacher, H. W.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Eberl, K.
PY - 2001/4/1
Y1 - 2001/4/1
N2 - We are using an atomic force microscope for the direct fabrication of low-dimensional quantum structures in GaAs/AlGaAs heterostructures. By combining mechanical nanolithography with current-controlled local oxidation it is possible to design devices such as a single-electron transistor with different shapes. In this step-by-step process the devices can be tested after every step of the nanolithography, which allows a very controlled fabrication of quantum dots. Here we present our experiments on systems with 2D-0D-2D and 2D-1D-2D tunneling characteristics.
AB - We are using an atomic force microscope for the direct fabrication of low-dimensional quantum structures in GaAs/AlGaAs heterostructures. By combining mechanical nanolithography with current-controlled local oxidation it is possible to design devices such as a single-electron transistor with different shapes. In this step-by-step process the devices can be tested after every step of the nanolithography, which allows a very controlled fabrication of quantum dots. Here we present our experiments on systems with 2D-0D-2D and 2D-1D-2D tunneling characteristics.
UR - http://www.scopus.com/inward/record.url?scp=0035531278&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(200104)224:3<681::AID-PSSB681>3.0.CO;2-D
DO - 10.1002/(SICI)1521-3951(200104)224:3<681::AID-PSSB681>3.0.CO;2-D
M3 - Article
AN - SCOPUS:0035531278
VL - 224
SP - 681
EP - 684
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 3
ER -