Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 787-792 |
| Seitenumfang | 6 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 13 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - 14 Sept. 2023 |
Abstract
This work is concerned with maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research activities have led to a drastically decreased recombination in the volume as well as at the surfaces and interfaces of crystalline silicon solar cells. As a result, open-circuit voltages (V OC) and fill factor (FF) values increased significantly. In order to classify how good the achieved improvements are, it is necessary to know the maximum achievable values. Unfortunately, there is no explicit expression for the FF in terms of other characteristic solar cell parameters. For this reason, the empirical FF 0-relation by Green is widely used to predict upper FF bounds for a given VOC. In order to evaluate to what extent Green's relation is a good approximation to recently obtained values, we study FF-V OC relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination using state-of-the-art analytical models. The obtained upper bounds are compared with recently published record values showing that all values stay below the intrinsic limit. We provide parameterizations of V OC and FF as a function of sample thickness w and base dopant density Ndop.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 13, Nr. 6, 14.09.2023, S. 787-792.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Extended FF and VOCParameterizations for Silicon Solar Cells
AU - Bothe, Karsten
AU - Hinken, David
AU - Brendel, Rolf
PY - 2023/9/14
Y1 - 2023/9/14
N2 - This work is concerned with maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research activities have led to a drastically decreased recombination in the volume as well as at the surfaces and interfaces of crystalline silicon solar cells. As a result, open-circuit voltages (V OC) and fill factor (FF) values increased significantly. In order to classify how good the achieved improvements are, it is necessary to know the maximum achievable values. Unfortunately, there is no explicit expression for the FF in terms of other characteristic solar cell parameters. For this reason, the empirical FF 0-relation by Green is widely used to predict upper FF bounds for a given VOC. In order to evaluate to what extent Green's relation is a good approximation to recently obtained values, we study FF-V OC relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination using state-of-the-art analytical models. The obtained upper bounds are compared with recently published record values showing that all values stay below the intrinsic limit. We provide parameterizations of V OC and FF as a function of sample thickness w and base dopant density Ndop.
AB - This work is concerned with maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research activities have led to a drastically decreased recombination in the volume as well as at the surfaces and interfaces of crystalline silicon solar cells. As a result, open-circuit voltages (V OC) and fill factor (FF) values increased significantly. In order to classify how good the achieved improvements are, it is necessary to know the maximum achievable values. Unfortunately, there is no explicit expression for the FF in terms of other characteristic solar cell parameters. For this reason, the empirical FF 0-relation by Green is widely used to predict upper FF bounds for a given VOC. In order to evaluate to what extent Green's relation is a good approximation to recently obtained values, we study FF-V OC relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination using state-of-the-art analytical models. The obtained upper bounds are compared with recently published record values showing that all values stay below the intrinsic limit. We provide parameterizations of V OC and FF as a function of sample thickness w and base dopant density Ndop.
KW - Fill factor
KW - open-circuit voltage
KW - silicon
KW - solar cell
UR - http://www.scopus.com/inward/record.url?scp=85171793177&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2023.3309932
DO - 10.1109/JPHOTOV.2023.3309932
M3 - Article
AN - SCOPUS:85171793177
VL - 13
SP - 787
EP - 792
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 6
ER -