Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 6828-6831 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 43 |
| Ausgabenummer | 8 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1991 |
| Extern publiziert | Ja |
Abstract
The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physical Review B, Jahrgang 43, Nr. 8, 01.01.1991, S. 6828-6831.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Experiments on scaling in AlxGa1-xAs/GaAs heterostructures under quantum Hall conditions
AU - Koch, S.
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Ploog, K.
PY - 1991/1/1
Y1 - 1991/1/1
N2 - The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
AB - The influence of repulsive (Be) and attractive (Si) scattering centers on the temperature-dependent half-width of the Shubnikovde Haas peaks B(T) and the maximum of the slope of the Hall resistance xy/B has been investigated at millikelvin temperatures for the two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures. Both sheet-doped and homogeneously doped samples were studied. In contrast to results reported for InxGa1-xAs/InP heterostructures, where a scaling exponent =0.42±0.04 with BT and (xy/B)maxT- is found and suggested to be universal, our data lead to scaling exponents that systematically increase with decreasing mobility. The transition between the integer filling factor 1 and the fractional filling factor 2/3 has been studied and a scaling behavior observed.
UR - http://www.scopus.com/inward/record.url?scp=26744450450&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.43.6828
DO - 10.1103/PhysRevB.43.6828
M3 - Article
AN - SCOPUS:26744450450
VL - 43
SP - 6828
EP - 6831
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 8
ER -