Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 033706 |
| Fachzeitschrift | Review of scientific instruments |
| Jahrgang | 82 |
| Ausgabenummer | 3 |
| Frühes Online-Datum | 3 März 2011 |
| Publikationsstatus | Veröffentlicht - März 2011 |
| Extern publiziert | Ja |
Abstract
We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge carriers are excited electrically (electroluminescence) using a power supply for carrier injection or optically (photoluminescence) using a laser as illumination source. The luminescence emission arising from the radiative recombination of the stimulated charge carriers is measured spatially resolved using a camera. We give details of the various components including cameras, optical filters for electro- and photo-luminescence, the semiconductor laser and the four-quadrant power supply. We compare a silicon charged-coupled device (CCD) camera with a back-illuminated silicon CCD camera comprising an electron multiplier gain and a complementary metal oxide semiconductor indium gallium arsenide camera. For the detection of the luminescence emission of silicon we analyze the dominant noise sources along with the signal-to-noise ratio of all three cameras at different operation conditions.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Instrumentierung
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in: Review of scientific instruments, Jahrgang 82, Nr. 3, 033706, 03.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers
AU - Hinken, David
AU - Schinke, Carsten
AU - Herlufsen, Sandra
AU - Schmidt, Arne
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: This work was funded by the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety under Contract No. 0327661.
PY - 2011/3
Y1 - 2011/3
N2 - We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge carriers are excited electrically (electroluminescence) using a power supply for carrier injection or optically (photoluminescence) using a laser as illumination source. The luminescence emission arising from the radiative recombination of the stimulated charge carriers is measured spatially resolved using a camera. We give details of the various components including cameras, optical filters for electro- and photo-luminescence, the semiconductor laser and the four-quadrant power supply. We compare a silicon charged-coupled device (CCD) camera with a back-illuminated silicon CCD camera comprising an electron multiplier gain and a complementary metal oxide semiconductor indium gallium arsenide camera. For the detection of the luminescence emission of silicon we analyze the dominant noise sources along with the signal-to-noise ratio of all three cameras at different operation conditions.
AB - We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge carriers are excited electrically (electroluminescence) using a power supply for carrier injection or optically (photoluminescence) using a laser as illumination source. The luminescence emission arising from the radiative recombination of the stimulated charge carriers is measured spatially resolved using a camera. We give details of the various components including cameras, optical filters for electro- and photo-luminescence, the semiconductor laser and the four-quadrant power supply. We compare a silicon charged-coupled device (CCD) camera with a back-illuminated silicon CCD camera comprising an electron multiplier gain and a complementary metal oxide semiconductor indium gallium arsenide camera. For the detection of the luminescence emission of silicon we analyze the dominant noise sources along with the signal-to-noise ratio of all three cameras at different operation conditions.
UR - http://www.scopus.com/inward/record.url?scp=79953663115&partnerID=8YFLogxK
U2 - 10.1063/1.3541766
DO - 10.1063/1.3541766
M3 - Article
AN - SCOPUS:79953663115
VL - 82
JO - Review of scientific instruments
JF - Review of scientific instruments
SN - 0034-6748
IS - 3
M1 - 033706
ER -