Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 14729-14732 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 51 |
| Ausgabenummer | 20 |
| Publikationsstatus | Veröffentlicht - 15 Mai 1995 |
| Extern publiziert | Ja |
Abstract
We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 51, Nr. 20, 15.05.1995, S. 14729-14732.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect
AU - Dorozhkin, S. I.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/5/15
Y1 - 1995/5/15
N2 - We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
AB - We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
UR - http://www.scopus.com/inward/record.url?scp=0004425772&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.14729
DO - 10.1103/PhysRevB.51.14729
M3 - Article
AN - SCOPUS:0004425772
VL - 51
SP - 14729
EP - 14732
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 20
ER -